High Frequency Electrical Transport Properties of Carbon Nanotubes

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dc.contributor.advisorFuhrer, Michael Sen_US
dc.contributor.advisorTakeuchi, Ichiroen_US
dc.contributor.authorCobas, Enrique Daríoen_US
dc.contributor.departmentMaterial Science and Engineeringen_US
dc.contributor.publisherDigital Repository at the University of Marylanden_US
dc.contributor.publisherUniversity of Maryland (College Park, Md.)en_US
dc.date.accessioned2011-02-19T07:03:51Z
dc.date.available2011-02-19T07:03:51Z
dc.date.issued2010en_US
dc.description.abstractCarbon nanotubes (CNTs) have extraordinary electronic properties owing to the unique band structure of graphene and their one-dimensional nature. Their small size and correspondingly small capacitances make them candidates for novel high-frequency devices with cut-off frequencies approaching one terahertz, but their high individual impedance hampers measurements of their high-frequency transport properties. In this dissertation, I describe the fabrication of carbon nanotube Schottky diodes on high-frequency compatible substrates and the measurement of their rectification at frequencies up to 40GHz as a method of examining the high-frequency transport of individual CNTs despite their high impedance. The frequency dependence of the rectified signal is then used to extract the Schottky junction capacitance as a function of applied bias and ambient doping and to look for resonances which might be a signature of a room-temperature Luttinger Liquid.en_US
dc.identifier.urihttp://hdl.handle.net/1903/11206
dc.subject.pqcontrolledNanotechnologyen_US
dc.subject.pqcontrolledCondensed Matter Physicsen_US
dc.subject.pqcontrolledMaterials Scienceen_US
dc.subject.pquncontrolledcarbon nanotubesen_US
dc.subject.pquncontrolledmicrowave rectificationen_US
dc.subject.pquncontrolledSchottky diodesen_US
dc.titleHigh Frequency Electrical Transport Properties of Carbon Nanotubesen_US
dc.typeDissertationen_US

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