Characterization of 4H-SiC MOSFETs Using First Principles Coulomb Scattering Mobility Modeling and Device Simulation

dc.contributor.advisorGoldsman, Neilen_US
dc.contributor.authorPotbhare, Siddharthen_US
dc.contributor.departmentElectrical Engineeringen_US
dc.contributor.publisherDigital Repository at the University of Marylanden_US
dc.contributor.publisherUniversity of Maryland (College Park, Md.)en_US
dc.description.abstractDetailed analysis of a 4H-SiC MOSFET has been carried out by numerically solving the steady state semiconductor Drift-Diffusion equations. Mobility models for bulk phonon scattering, surface phonon scattering, surface roughness scattering, Coulomb scattering by interface traps and oxide charges, and high field effects, have been developed and implemented. A first principles Coulomb scattering mobility model has been developed specifically to model the physics of the inversion layer in 4H-SiC MOSFETs. The Coulomb scattering model takes into account, scattering of mobile charges by occupied interface traps and fixed oxide charges, distribution of mobile charges in the inversion layer, and screening. Simulated IV curves have been compared to experimental data. Density of states for the interface traps have been extracted, and seem to be in agreement with experimental measurements. Simulations indicate that occupied interface traps in 4H-SiC MOSFETs are responsible for mobility degradation, low currents and high threshold voltages. Their effect diminishes at high temperatures due to reduction in trap occupancy, and at high gate voltages due to increased screening. At high gate voltages, surface roughness scattering plays the major role in mobility degradation in 4H-SiC MOSFETs.en_US
dc.format.extent1376797 bytes
dc.subject.pqcontrolledEngineering, Electronics and Electricalen_US
dc.subject.pquncontrolledSilicon Carbideen_US
dc.subject.pquncontrolledCoulomb Scatteringen_US
dc.subject.pquncontrolledInterface Trapsen_US
dc.subject.pquncontrolledMobility Modeling;en_US
dc.titleCharacterization of 4H-SiC MOSFETs Using First Principles Coulomb Scattering Mobility Modeling and Device Simulationen_US


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