COMPOSITE QUANTUM WELL: CO-EXISTENCE OF ELECTRONS AND HOLES

dc.contributor.advisor	Yang, Chia-Hung	en_US
dc.contributor.author	Mampazhy, Arun Sankar	en_US
dc.contributor.department	Electrical Engineering	en_US
dc.contributor.publisher	Digital Repository at the University of Maryland	en_US
dc.contributor.publisher	University of Maryland (College Park, Md.)	en_US
dc.date.accessioned	2005-08-03T14:32:07Z
dc.date.available	2005-08-03T14:32:07Z
dc.date.issued	2005-04-28	en_US
dc.description.abstract	A field effect transistor is fabricated using a composite quantum well structure consisting of adjacent semiconductor quantum wells, GaSb and InAs, sandwiched by AlSb and GaSb barriers. It is found that with a proper gate bias the concentration of the hole and the electron carriers in this device can be controlled. Properties of this device can be utilized in realizing lateral resonant interband tunneling diodes, single electrons transistors and other interesting quantum devices.	en_US
dc.format.extent	1110433 bytes
dc.format.mimetype	application/pdf
dc.identifier.uri	http://hdl.handle.net/1903/2505
dc.language.iso	en_US
dc.subject.pqcontrolled	Engineering, Electronics and Electrical	en_US
dc.subject.pquncontrolled	Microelectronics	en_US
dc.subject.pquncontrolled	nanotechnology	en_US
dc.subject.pquncontrolled	transistors	en_US
dc.subject.pquncontrolled	quantum well	en_US
dc.subject.pquncontrolled	electrons and holes;electrical engineering	en_US
dc.title	COMPOSITE QUANTUM WELL: CO-EXISTENCE OF ELECTRONS AND HOLES	en_US
dc.type	Thesis	en_US

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