COMPOSITE QUANTUM WELL: CO-EXISTENCE OF ELECTRONS AND HOLES

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dc.contributor.advisorYang, Chia-Hungen_US
dc.contributor.authorMampazhy, Arun Sankaren_US
dc.contributor.departmentElectrical Engineeringen_US
dc.contributor.publisherDigital Repository at the University of Marylanden_US
dc.contributor.publisherUniversity of Maryland (College Park, Md.)en_US
dc.date.accessioned2005-08-03T14:32:07Z
dc.date.available2005-08-03T14:32:07Z
dc.date.issued2005-04-28en_US
dc.description.abstractA field effect transistor is fabricated using a composite quantum well structure consisting of adjacent semiconductor quantum wells, GaSb and InAs, sandwiched by AlSb and GaSb barriers. It is found that with a proper gate bias the concentration of the hole and the electron carriers in this device can be controlled. Properties of this device can be utilized in realizing lateral resonant interband tunneling diodes, single electrons transistors and other interesting quantum devices.en_US
dc.format.extent1110433 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.urihttp://hdl.handle.net/1903/2505
dc.language.isoen_US
dc.subject.pqcontrolledEngineering, Electronics and Electricalen_US
dc.subject.pquncontrolledMicroelectronicsen_US
dc.subject.pquncontrollednanotechnologyen_US
dc.subject.pquncontrolledtransistorsen_US
dc.subject.pquncontrolledquantum wellen_US
dc.subject.pquncontrolledelectrons and holes;electrical engineeringen_US
dc.titleCOMPOSITE QUANTUM WELL: CO-EXISTENCE OF ELECTRONS AND HOLESen_US
dc.typeThesisen_US

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