COMPOSITE QUANTUM WELL: CO-EXISTENCE OF ELECTRONS AND HOLES

Abstract

A field effect transistor is fabricated using a composite quantum well structure consisting of adjacent semiconductor quantum wells, GaSb and InAs, sandwiched by AlSb and GaSb barriers. It is found that with a proper gate bias the concentration of the hole and the electron carriers in this device can be controlled. Properties of this device can be utilized in realizing lateral resonant interband tunneling diodes, single electrons transistors and other interesting quantum devices.