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Magnetoresistive effects in planar NiFe nanoconstrictions

dc.contributor.authorFlorez, S. H.
dc.contributor.authorDreyer, M.
dc.contributor.authorSchwab, K.
dc.contributor.authorSanchez, C.
dc.contributor.authorGomez, R.D.
dc.identifier.citationS. H. Florez, M. Dreyer, K. Schwab, C. Sanchez, and R. D. Gomez*, “Magnetoresistive effects in planar NiFe nanoconstrictions”, Journal of Applied Physics 95, 2004, 6720.en
dc.description.abstractThis study focuses on domain wall resistance in Ni80Fe20 nanowires containing narrow constrictions down to 15 nm in width. Distinct differences in the magnetoresistance curves were found to depend on the constriction size. Wider constrictions are dominated by the overall anisotropic magnetoresistance of the structure, while constrictions narrower than ;40 nm exhibit an additional distinct contribution from a domain wall. The effect is negative and typically varies from 1% to 5%.en
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dc.publisherAmerican Institute of Physicsen
dc.titleMagnetoresistive effects in planar NiFe nanoconstrictionsen
dc.relation.isAvailableAtA. James Clark School of Engineeringen_us
dc.relation.isAvailableAtElectrical & Computer Engineeringen_us
dc.relation.isAvailableAtDigital Repository at the University of Marylanden_us
dc.relation.isAvailableAtUniversity of Maryland (College Park, MD)en_us
dc.rights.licenseCopyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article may be found at

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