Full wafer mapping and response surface modeling techniques for thin ﬁlm deposition processes
Leon, Marıa del Pilar
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Computational techniques for representing and analyzing full wafer metrology data are developed for chemical vapor deposition and other thin-ﬁlm processing applications. Spatially resolved mea- surement data are used to produce “vir tual wafers” that are subsequently used to create response surface models for predicting the full-wafer thickness, composition, or any other proper ty proﬁle as a function of processing parameters. Statistical analysis tools are developed to assess model prediction accuracy and to compare the relative accuracies of different models created from the same wafer data set. Examples illustrating the use of these techniques for ﬁlm proper ty unifor- mity optimization and for creating intentional ﬁlm-proper ty spatial gradients for combinatorial CVD applications are presented.