Full wafer mapping and response surface modeling techniques for thin film deposition processes

dc.contributor.authorLeon, Marıa del Pilar
dc.contributor.authorAdomaitis, Raymond
dc.date.accessioned2008-07-28T13:59:29Z
dc.date.available2008-07-28T13:59:29Z
dc.date.issued2008-07-25
dc.description.abstractComputational techniques for representing and analyzing full wafer metrology data are developed for chemical vapor deposition and other thin-film processing applications. Spatially resolved mea- surement data are used to produce “vir tual wafers” that are subsequently used to create response surface models for predicting the full-wafer thickness, composition, or any other proper ty profile as a function of processing parameters. Statistical analysis tools are developed to assess model prediction accuracy and to compare the relative accuracies of different models created from the same wafer data set. Examples illustrating the use of these techniques for film proper ty unifor- mity optimization and for creating intentional film-proper ty spatial gradients for combinatorial CVD applications are presented.en
dc.description.sponsorshipThe authors acknowledges the support of the National Science Foundation through grant CTS-0554045.en
dc.format.extent1409697 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.urihttp://hdl.handle.net/1903/8289
dc.language.isoen_USen
dc.relation.isAvailableAtInstitute for Systems Researchen_us
dc.relation.isAvailableAtDigital Repository at the University of Marylanden_us
dc.relation.isAvailableAtUniversity of Maryland (College Park, MD)en_us
dc.relation.ispartofseriesTR 2008-12en
dc.subjectchemical vapor depositionen
dc.subjectresponse surface modelingen
dc.titleFull wafer mapping and response surface modeling techniques for thin film deposition processesen
dc.typeTechnical Reporten

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