Institute for Systems Research Technical Reports

In this research, an ULVAC ERA-1000 selective tungsten chemical vapor deposition system located at the University of Maryland was studied where a temperature difference as large as 120 ^oC between the system wafer temperature reading and the thermocoupled instrumented wafer measurement was found during the manual processing mode.

The goal of this research was to develop a simplified, but accurate, three-dimensional transport model that is capable of describing the observed reactor behavior.

A hybrid approach combining experimental and simulation studies was used for model development. Several sets of experiments were conducted to investigate the effects of process parameters on wafer temperature.

A three-dimensional gas flow and temperature model was developed and used to compute the energy transferred across the gas/wafer interface. System dependent heat transfer parameters were formulated as a nonlinear parameter estimation problem and identified using experimental measurements.

Good agreement was found between the steady-state wafer temperature predictions and experimental data at various gas compositions, and the wafer temperature dynamics were successfully predicted using a temperature model considering the energy exchanges between the thermocouple, wafer, and showerhead.

By monitoring the resonant frequency of exhaust process gases, the depletion of WF6 resulting from the reduction by H2 was readily observed in the 0.5 Torr process for wafer temperatures ranging from 300 to 350 C. Despite WF6 depletion rates as low as 3-5%, in-situ wafer-state metrology was achieved with an error less than 6% over 17 processed wafers.

This in-situ metrology capability combined with accurate sensor response modeling suggests an effective approach for acoustic process sensing in order to achieve run-to-run process control of the deposited tungsten film thickness.

With process heating lamp power held constant, wafertemperature variations of up to 160 degrees K were observed by varying feed gasH_2/N_2 ratio. Heat transfer between the wafer and susceptor wasstudied by shifting the instrumented wafer off the susceptor axis,exposing a portion of the wafer backside to the chamber floor. Modelpredictions and experimental observations both demonstrated that the gasvelocity field had little influence on the observed wafer and predictedgas temperatures.

The DHOBE algorithm, for eachrecursion, returns an outer bounding ellipsoid of the estimated parameters. If the center of the ellipsoid each time istaken as the model coefficients, the explicit model update isimplemented which leads to a model-reference method. If we choose theworst-case point which maximizes the cost function in the set, then wecan apply the set-valued worst case approach. These two methods were compared with two other main RtRcontrol schemes: the Exponentially Weighted Moving Average (EWMA) methodand the Optimizing Adaptive Quality Controller (OAQC) method. Simulation results showed the superior performance of the RtRcontrollers based on the DHOBE algorithm. Furthermore this paper showedthat it is necessary to applynonlinear models to compensate for severe nonlinear processes.