EXPLOITING PROCESS SYNERGY BETWEEN ANODIC ALUMINUM OXIDE NANOTEMPLATES AND ATOMIC LAYER DEPOSITION: FROM THIN FILMS TO 3D NANO-ELECTRONIC DEVICES

Simple item page
dc.contributor.authorBanerjee, Parag
dc.date.accessioned2011-06-17T13:14:19Z
dc.date.available2011-06-17T13:14:19Z
dc.date.issued2011-06-10
dc.description.abstractSelf-assembled, 3D nanoporous templates present an opportunity to develop devices which are lithography-free, massively scalable and hence, highly manufacturable. Self-limited deposition processes on the other hand, allow functional thin films to be deposited inside such templates with precision and unprecedented conformality. Taken together, the combination of both processes provides a powerful ‘toolbox’ to enable many modern nano devices. In this work, I will present data in three parts. First, I will demonstrate the capabilities of Atomic Layer Deposition (ALD), a self-limited thin film deposition technique in preparing nanoalloyed Al-doped ZnO (AZO) thin films. These films are visibly transparent and electrically conducting. Structure-property relationships are established that highlight the power of ALD to tailor film compositions at the nanoscale. Next, I will use ALD ZnO films in conjunction with aged, ALD V2O5 films to form pn junctions which show rectification with an Ion/Ioff as high as 598. While, the ZnO is a well known n-type semiconductor, the discovery of p-type conductivity in aged V2O5 is surprising and is found to be due to the protonic (H+) conductivity of intercalated H2O in V2O5. Thus, we demonstrate a mixed electronic-ionic pn junction for the first time. Finally, I combine the material set of the pn junction with self-assembled, anodic aluminum oxide (AAO) 3D nanoporous templates to create 3D nanotubular pn junctions. The pn junctions are built inside pores which are only 90nm wide and up to 2μm deep and show rectification with Ion/Ioff of 16.7. Process development and integrations strategies will be discussed that allow for large scale manufacturing of such devices a real possibility.en_US
dc.description.sponsorshipJohn and Maureen Hendricks Foundationen_US
dc.identifier.citationBanerjee, P., W. J. Lee, et al. (2010). "Structural, electrical, and optical properties of atomic layer deposition Al-doped ZnO films." Journal of Applied Physics 108(4): 7en_US
dc.identifier.urihttp://hdl.handle.net/1903/11401
dc.language.isoen_USen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.isAvailableAtInstitute for Systems Researchen_us
dc.relation.isAvailableAtDigital Repository at the University of Marylanden_us
dc.relation.isAvailableAtUniversity of Maryland (College Park, MD)en_us
dc.relation.ispartofseriesTR-2011-05
dc.subjectatomic layer depositionen_US
dc.subjectAl-doped ZnOen_US
dc.subjectVanadiaen_US
dc.subjectdiodesen_US
dc.subjectpn junctionen_US
dc.subjectAnodic Aluminum Oxideen_US
dc.subjectALDen_US
dc.subjectAAOen_US
dc.subjectV2O5en_US
dc.subjectAZOen_US
dc.subjectnanotubularen_US
dc.titleEXPLOITING PROCESS SYNERGY BETWEEN ANODIC ALUMINUM OXIDE NANOTEMPLATES AND ATOMIC LAYER DEPOSITION: FROM THIN FILMS TO 3D NANO-ELECTRONIC DEVICESen_US
dc.typeTechnical Reporten_US

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
PhDThesis_Parag Banerjee.pdf
Size:
2.59 MB
Format:
Adobe Portable Document Format
Download
License bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.64 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

Institute for Systems Research Technical Reports