ORIENTATION DEPENDENCE OF THE PIEZOELECTRIC PROPERTIES OF EPITAXIAL FERROELECTRIC THIN FILMS

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dc.contributor.advisorRoytburd, Alexander L.en_US
dc.contributor.authorOuyang, Junen_US
dc.contributor.departmentMaterial Science and Engineeringen_US
dc.contributor.publisherDigital Repository at the University of Marylanden_US
dc.contributor.publisherUniversity of Maryland (College Park, Md.)en_US
dc.date.accessioned2005-08-03T15:40:42Z
dc.date.available2005-08-03T15:40:42Z
dc.date.issued2005-07-08en_US
dc.description.abstractThere are both intrinsic piezoelectric response and extrinsic piezoelectric response in ferroelectric materials. The intrinsic piezoelectric response is due to the lattice deformation of a single-domain crystal, which can be characterized by tensors of piezoelectric constants. The extrinsic piezoelectric response depends on extrinsic sources of displacement under the electric field, which can be the movement of domain walls, phase boundaries, or even defects like grain boundaries or dislocations. Due to the elastic interaction between an epitaxial ferroelectric thin film and a substrate, the piezoelectric properties of an epitaxial ferroelectric film are different from those of bulk ferroelectric materials. This work is the first study on the general orientation dependence of the piezoelectric properties of epitaxial ferroelectric thin films, which includes both theoretical and experiment work on intrinsic and extrinsic piezoelectric properties of epitaxial ferroelectric films. A complete theoretical analysis of intrinsic piezoelectric responses in a single domain ferroelectric film, which are characterized by effective longitudinal,transverse and shear piezoelectric coefficients, is presented in this dissertation. On the part of extrinsic piezoelectric response, our recent work on the piezoelectric properties of epitaxial thick lead titanate zirconate (Pb(ZrxTi1-x)O3 with x=0.52) films with tetragonal distorted structures will be presented as an example. It is shown that(011) oriented epitaxial films had much enhanced piezoelectric responses as compared with those of (001) and (111) oriented films. Detailed structure analysis showed that instead of an interconnected 3-domain (3-D) architecture that is usually found in a (001) oriented thick film, the (011) films consisted of a dominant 2-domain (2-D) architecture, by which the pinning between neighboring domain walls is much reduced. This study demonstrate the possibility of achieving high extrinsic piezoelectric responses by optimizing the epitaxial relationship between the film and substrate with respect to the domain mobility, and should also be instructive to the design of ferromagnetic and ferroelastic thin film devices used for transducer applications.en_US
dc.format.extent6726346 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.urihttp://hdl.handle.net/1903/2699
dc.language.isoen_US
dc.subject.pqcontrolledEngineering, Materials Scienceen_US
dc.subject.pqcontrolledEngineering, Electronics and Electricalen_US
dc.subject.pqcontrolledPhysics, Condensed Matteren_US
dc.subject.pquncontrolledepitaxyen_US
dc.subject.pquncontrolledferroelectric filmsen_US
dc.subject.pquncontrolledpiezoelectric propertyen_US
dc.subject.pquncontrolledorientation dependenceen_US
dc.subject.pquncontrolledMEMSen_US
dc.subject.pquncontrolledtransduceren_US
dc.titleORIENTATION DEPENDENCE OF THE PIEZOELECTRIC PROPERTIES OF EPITAXIAL FERROELECTRIC THIN FILMSen_US
dc.typeDissertationen_US

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