Decay of Silicon Mounds: Scaling Laws and Description with Continuum Step Parameters

dc.contributor.author	Ichimiya, A.
dc.contributor.author	Hayashi, K.
dc.contributor.author	Williams, Ellen D.
dc.contributor.author	Einstein, Theodore L.
dc.contributor.author	Uwaha, M.
dc.contributor.author	Watanabe, K.
dc.date.accessioned	2024-03-11T15:55:14Z
dc.date.available	2024-03-11T15:55:14Z
dc.date.issued	2000
dc.description.abstract	The decay of mounds about a dozen layers high on the Si(111)?(7x7) surface has been measured quantitatively by scanning tunneling microscopy and compared with analytic predictions for the power-law dependence on time predicted for a step-mediated decay mechanism. Conformably, we find an exponent 1/4 associated with the (3D) decay of the mound height and exponent 1/3 associated with the (2D) decay of top-layer islands. Using parameters from a continuum step model, we capture the essence of the kinetics. Qualitative features distinguish these mounds from multilayer islands found on metals.
dc.description.uri	https://doi.org/10.1103/PhysRevLett.84.3662
dc.identifier	https://doi.org/10.13016/bcpu-rohe
dc.identifier.citation	Ichimiya et al, Decay of Silicon Mounds: Scaling Laws and Description with Continuum Step Parameters. Physical Review Letters, 84, 3662-3665, 2000.
dc.identifier.uri	http://hdl.handle.net/1903/32298
dc.publisher	American Physical Society
dc.title	Decay of Silicon Mounds: Scaling Laws and Description with Continuum Step Parameters
dc.type	Article

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