Decay of Silicon Mounds: Scaling Laws and Description with Continuum Step Parameters

dc.contributor.authorIchimiya, A.
dc.contributor.authorHayashi, K.
dc.contributor.authorWilliams, Ellen D.
dc.contributor.authorEinstein, Theodore L.
dc.contributor.authorUwaha, M.
dc.contributor.authorWatanabe, K.
dc.date.accessioned2024-03-11T15:55:14Z
dc.date.available2024-03-11T15:55:14Z
dc.date.issued2000
dc.description.abstractThe decay of mounds about a dozen layers high on the Si(111)?(7x7) surface has been measured quantitatively by scanning tunneling microscopy and compared with analytic predictions for the power-law dependence on time predicted for a step-mediated decay mechanism. Conformably, we find an exponent 1/4 associated with the (3D) decay of the mound height and exponent 1/3 associated with the (2D) decay of top-layer islands. Using parameters from a continuum step model, we capture the essence of the kinetics. Qualitative features distinguish these mounds from multilayer islands found on metals.
dc.description.urihttps://doi.org/10.1103/PhysRevLett.84.3662
dc.identifierhttps://doi.org/10.13016/bcpu-rohe
dc.identifier.citationIchimiya et al, Decay of Silicon Mounds: Scaling Laws and Description with Continuum Step Parameters. Physical Review Letters, 84, 3662-3665, 2000.
dc.identifier.urihttp://hdl.handle.net/1903/32298
dc.publisherAmerican Physical Society
dc.titleDecay of Silicon Mounds: Scaling Laws and Description with Continuum Step Parameters
dc.typeArticle

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