Decay of Silicon Mounds: Scaling Laws and Description with Continuum Step Parameters

Abstract

The decay of mounds about a dozen layers high on the Si(111)?(7x7) surface has been measured quantitatively by scanning tunneling microscopy and compared with analytic predictions for the power-law dependence on time predicted for a step-mediated decay mechanism. Conformably, we find an exponent 1/4 associated with the (3D) decay of the mound height and exponent 1/3 associated with the (2D) decay of top-layer islands. Using parameters from a continuum step model, we capture the essence of the kinetics. Qualitative features distinguish these mounds from multilayer islands found on metals.