Maskless Fabrication of Junction Field Effect Transistors via Focused Ion Beams
| dc.contributor.advisor | Melngailis, John | en_US |
| dc.contributor.author | De Marco, Anthony John | en_US |
| dc.contributor.department | Electrical Engineering | en_US |
| dc.date.accessioned | 2004-05-31T20:17:46Z | |
| dc.date.available | 2004-05-31T20:17:46Z | |
| dc.date.issued | 2004-04-14 | en_US |
| dc.description.abstract | Focused ion beam (FIB) techniques were used to construct junction field effect transistors (JFETs) on a mesa of n-type silicon on an SOI chip. The implantation and metal contacts were made by FIB, which suggests that this technique can be used to make transistors in a non-standard geometry, such as the tip of a scanning probe or on a MEMS structure. FIB dopant implantation was used to direct-write the source, gate, and drain regions of each device. The contact resistance of platinum grown on silicon by FIB-induced deposition was investigated, and found to be suitable for producing ohmic contacts to heavily doped silicon. Several proof-of-concept devices were made with FIB deposited platinum as contacts to demonstrate the technique's potential. Other devices were created with conventional aluminum contacts instead of FIB-platinum as a control set, to isolate and investigate the effect of variable gate doping on device characteristics. All devices were 90 μm by 90 μm with a gate length of 1 μm. A graded doping profile was found to be an effective means of decreasing the short-channel effects that result in increasing source-drain current past saturation. | en_US |
| dc.format.extent | 12974640 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.identifier.uri | http://hdl.handle.net/1903/231 | |
| dc.language.iso | en_US | |
| dc.relation.isAvailableAt | Digital Repository at the University of Maryland | en_US |
| dc.relation.isAvailableAt | University of Maryland (College Park, Md.) | en_US |
| dc.subject.pqcontrolled | Engineering, Electronics and Electrical | en_US |
| dc.title | Maskless Fabrication of Junction Field Effect Transistors via Focused Ion Beams | en_US |
| dc.type | Dissertation | en_US |
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