Electronic Properties of Carbon Nanotubes studied in Field-Effect Transistor Geometries
Electronic Properties of Carbon Nanotubes studied in Field-Effect Transistor Geometries
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Date
2004-05-12
Authors
Dürkop, Tobias
Advisor
Fuhrer, Michael S
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Abstract
Due to their outstanding properties carbon nanotubes have attracted
considerable research effort during the last decade. While they serve as an
example of a 1-dimensional electron system allowing one to study fundamental
quantum effects nanotubes-especially semiconducting nanotubes-are an
interesting candidate for next-generation transistor application with the
potential to replace silicon-based devices.
I have fabricated nanotubes using
chemical vapor deposition techniques with various catalysts and gas
mixtures. The nanotubes produced with these techniques vary in length from
100 nm to several hundreds of micrometers. While data taken on shorter
metallic and semiconducting devices show Coulomb blockade effects, the main
part of this work is concerned with measurements that shed light on the intrinsic
properties of semiconducting nanotubes.
On devices with lengths of more than 300 um I have carried out
measurements of the intrinsic hole mobility as well as the device-specific
field-effect mobility. The mobility measured on these nanotube devices at room
temperature exceeds that of any semiconductor known previously.
Another important consideration in nanotube transistor applications are
hysteresis effects. I present measurements on the time scales involved in some
of these hysteresis effects and a possible application of the hysteresis for
memory devices.