Testing and Characterization of Silicon Devices at Cryogenic Temperatures

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2007-05-07

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Abstract

Satellite and space exploration applications require electronics which are capable of operation at extremely low temperatures (T<40K). Low temperature device models are essential for the design of circuits operating in these extreme environments. To address these needs, a helium Dewar test setup has been constructed and used to evaluate several MOSFET devices, a bipolar device, and a tunneling structure. The temperature dependent performance of each has been characterized down to 20K and, in some cases, as low as 4K. Complete voltage and temperature dependent MOSFET characteristics have led to the development of a simulator which predicts device performance at cryogenic temperatures. A tunneling structure has demonstrated comparable low temperature voltage reference performance to that of a silicon germanium voltage reference circuit.

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