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dc.contributor.authorSreenivasan, Ramaswamy
dc.contributor.authorAdomaitis, Raymond A.
dc.date.accessioned2007-10-25T13:51:30Z
dc.date.available2007-10-25T13:51:30Z
dc.date.issued2007-10-24
dc.identifier.urihttp://hdl.handle.net/1903/7434
dc.description.abstractSegmented CVD reactor designs enabling spatial control of across-wafer gas phase composition were evaluated for depositing graded films suitable for combinatorial studies. Specifically two reactor designs were constructed and evaluated with experiments and response surface model (RSM) based analysis to quantify the reactor performance in terms of film thickness uniformity, sensitivity to adjustable reactor operating conditions, range of thickness over which uniformity could be achieved and each reactor’s ability to control the thickness gradient across the wafer surface. Design features distinguishing the two reactor systems and their influence on gradient control versus deposition rate performance are summarized. RS models relating wafer state properties to process recipes are shown to be effective tools to quantify, qualify and compare different reactor designs.en
dc.description.sponsorshipNational Science Foundationen
dc.format.extent3517594 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoen_USen
dc.relation.ispartofseriesTR 2007-25en
dc.subjectchemical vapor depositionen
dc.subjectcombinatorialen
dc.titleA Comparative Study of Reactor Designs for the Production of Graded Films with Applications to Combinatorial CVDen
dc.typeArticleen
dc.relation.isAvailableAtInstitute for Systems Researchen_us
dc.relation.isAvailableAtDigital Repository at the University of Marylanden_us
dc.relation.isAvailableAtUniversity of Maryland (College Park, MD)en_us


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