アイテムの簡略レコードを表示する

Development and Optimization of Integrative MEMS-Based Gray-Scale Technology In Silicon For Power MEMS Applications

dc.contributor.advisorGhodssi, Rezaen_US
dc.contributor.authorGhodssi, Rezaen_US
dc.contributor.authorWaits, Christopher M.en_US
dc.contributor.authorMorgan, Brian C.en_US
dc.date.accessioned2007-05-23T10:15:43Z
dc.date.available2007-05-23T10:15:43Z
dc.date.issued2004en_US
dc.identifier.urihttp://hdl.handle.net/1903/6458
dc.description.abstractAs the field of micro-electro-mechanical systems (MEMS) has diversified, a growing number of applications are limited by the current planar technology available for fabrication. Gray-scale technology offers a method of fabricating 3-D structures in MEMS utilizing a single lithography step. Before gray-scale technology can be accepted as a universal/standard fabrication technique, methods for controlling the silicon profiles and integrating the necessary process steps must be developed. Here, an optical mask design method is outlined by which an arbitrary profile may be defined in a photoresist film, and a study is presented regarding the control of etch selectivity during deep reactive ion etching (DRIE). These results are then used to develop large controlled gradient silicon structures for the MIT micro-engine device that may be integrated into an existing process flow.en_US
dc.format.extent371503 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoen_USen_US
dc.relation.ispartofseriesISR; TR 2004-42en_US
dc.titleDevelopment and Optimization of Integrative MEMS-Based Gray-Scale Technology In Silicon For Power MEMS Applicationsen_US
dc.typeTechnical Reporten_US
dc.contributor.departmentISRen_US


このアイテムのファイル

Thumbnail

このアイテムは次のコレクションに所属しています

アイテムの簡略レコードを表示する