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Comparison Of Advanced Resist Etching In E-Beam Generated Plasmas

dc.contributor.advisorOehrlein, Gottlieb Sen_US
dc.contributor.authorOrf, Bryan Jen_US
dc.date.accessioned2006-06-14T06:15:48Z
dc.date.available2006-06-14T06:15:48Z
dc.date.issued2006-06-12en_US
dc.identifier.urihttp://hdl.handle.net/1903/3660
dc.description.abstractThe use of e-beam based plasma as a source for plasma-polymer interactions was investigated employing two advanced photoresists that differed significantly in polymer structure. The influence of Ar+ bombardment energy, chemically-assisted etching using fluorine, and the effects of the presence of a thin fluorocarbon (FC) layer on surface roughness evolution and etching rates of the blanket photoresists were determined. Low energy ion bombardment increased surface roughness. Small amounts of fluorine (5% SF6/Ar), resulted in a further increase of the surface roughness and etch rate over values of Ar+ ion bombardment alone. An unexpected result was that the photoresist surface roughness evolved during the afterglow of an Ar plasma and decreased for long afterglows (300 ms). It was shown that the roughness of an FC overlayer impact the photoresist underlayer etching and surface roughening. The magnitude of the change was dependent on the conditions under which the FC overlayer is deposited.en_US
dc.format.extent567119 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.titleComparison Of Advanced Resist Etching In E-Beam Generated Plasmasen_US
dc.typeThesisen_US
dc.contributor.publisherDigital Repository at the University of Marylanden_US
dc.contributor.publisherUniversity of Maryland (College Park, Md.)en_US
dc.contributor.departmentMaterial Science and Engineeringen_US
dc.subject.pqcontrolledEngineering, Materials Scienceen_US


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