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Tuning the hysteresis of a metal-insulator transition via lattice compatibility

dc.contributor.authorLiang, Y. G.
dc.contributor.authorLee, S.
dc.contributor.authorYu, H. S.
dc.contributor.authorZhang, H. R.
dc.contributor.authorLiang, Y. J.
dc.contributor.authorZavalij, P. Y.
dc.contributor.authorChen, X.
dc.contributor.authorJames, R. D.
dc.contributor.authorBendersky, L. A.
dc.contributor.authorDavydov, A. V.
dc.contributor.authorZhang, X. H.
dc.contributor.authorTakeuchi, I.
dc.identifier.citationLiang, Y.G., Lee, S., Yu, H.S. et al. Tuning the hysteresis of a metal-insulator transition via lattice compatibility. Nat Commun 11, 3539 (2020).en_US
dc.descriptionPartial funding for Open Access provided by the UMD Libraries' Open Access Publishing Fund.en_US
dc.description.abstractStructural phase transitions serve as the basis for many functional applications including shape memory alloys (SMAs), switches based on metal-insulator transitions (MITs), etc. In such materials, lattice incompatibility between transformed and parent phases often results in a thermal hysteresis, which is intimately tied to degradation of reversibility of the transformation. The non-linear theory of martensite suggests that the hysteresis of a martensitic phase transformation is solely determined by the lattice constants, and the conditions proposed for geometrical compatibility have been successfully applied to minimizing the hysteresis in SMAs. Here, we apply the non-linear theory to a correlated oxide system (V1−xWxO2), and show that the hysteresis of the MIT in the system can be directly tuned by adjusting the lattice constants of the phases. The results underscore the profound influence structural compatibility has on intrinsic electronic properties, and indicate that the theory provides a universal guidance for optimizing phase transforming materials.en_US
dc.publisherSpringer Natureen_US
dc.subjectElectronic properties and materialsen_US
dc.subjectPhase transitions and critical phenomenaen_US
dc.titleTuning the hysteresis of a metal-insulator transition via lattice compatibilityen_US
dc.relation.isAvailableAtA. James Clark School of Engineeringen_us
dc.relation.isAvailableAtMaterials Science & Engineeringen_us
dc.relation.isAvailableAtDigital Repository at the University of Marylanden_us
dc.relation.isAvailableAtUniversity of Maryland (College Park, MD)en_us

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