Study of Wet-Chemically-Prepared Hydrogen-Terminated Silicon (111) Surfaces and a Novel Implementation of a High-Resolution Interferometer
dc.contributor.advisor | Williams, Ellen D | en_US |
dc.contributor.advisor | Silver, Richard M | en_US |
dc.contributor.author | Zhou, Hui | en_US |
dc.contributor.department | Chemical Physics | en_US |
dc.date.accessioned | 2004-06-04T05:53:01Z | |
dc.date.available | 2004-06-04T05:53:01Z | |
dc.date.issued | 2004-04-30 | en_US |
dc.description.abstract | This thesis summarizes my graduate study under the National Institute of Standards and Technology (NIST) Atom-Based Dimensional Metrology Project, in which we are developing methods for measuring sub-micrometer dimensions including directly counting atom spacings on a silicon-surface lattice. Atomically flat, hydrogen-terminated Si(111) surfaces are prepared using wet chemistry. The surface morphology after the wet-chemistry preparation was found to be dependent on both the initial etching time and wafer miscut. These two factors have been neglected in literature. To produce a morphology of uniform, long-range steps and terraces, the miscut angle has to be larger than a certain angle. The development and dynamics of the surface morphology was explained by preferential etching. A kinetic Monte-Carlo simulation was used to quantitatively study some of the key aspects of the surface-morphology evolution, such as step flow, pit expansion, and step?pit collision. The hydrogen-terminated silicon surfaces prepared using wet-chemical etching method were used as substrates to create nanometer-scale patterns using a scanning tunneling microscope (STM)-probe-induced surface modification in both ultra-high vacuum (UHV) and low-vacuum environments. Patterns created in UHV have linewidths below 10 nm, while patterns created in low vacuum had a minimum linewidth of nominally 20 nm. The pattern created in a low vacuum environment was further processed using SF6 reactive-ion etching, resulting in patterns whose aspect ratio had increased more than 5 times. To enable accurate measurement of atom spacings, a Michelson interferometer of novel design was implemented in this research, based on the principle that during operation, the interference-fringe signal is locked at a zero point by tuning the laser frequency, thus transferring the displacement measurement into a laser-frequency measurement and greatly increasing the measurement resolution. The interferometer is designed to be integrated into an ultra-high-vacuum scanning tunneling microscope for atom-resolved measurements. This unique implementation achieves a nominal resolution of sub-angstrom. In this thesis, the principles of the interferometer design and the uncertainty budget of the interferometer are discussed. | en_US |
dc.format.extent | 5648946 bytes | |
dc.format.mimetype | application/pdf | |
dc.identifier.uri | http://hdl.handle.net/1903/1491 | |
dc.language.iso | en_US | |
dc.relation.isAvailableAt | Digital Repository at the University of Maryland | en_US |
dc.relation.isAvailableAt | University of Maryland (College Park, Md.) | en_US |
dc.subject.pqcontrolled | Physics, Condensed Matter | en_US |
dc.subject.pqcontrolled | Chemistry, Physical | en_US |
dc.subject.pqcontrolled | Physics, Optics | en_US |
dc.subject.pquncontrolled | SILICON | en_US |
dc.subject.pquncontrolled | NH4F | en_US |
dc.subject.pquncontrolled | STEPFLOW | en_US |
dc.subject.pquncontrolled | SIMULATION | en_US |
dc.subject.pquncontrolled | ETCHING | en_US |
dc.subject.pquncontrolled | INTERFEROMETER | en_US |
dc.title | Study of Wet-Chemically-Prepared Hydrogen-Terminated Silicon (111) Surfaces and a Novel Implementation of a High-Resolution Interferometer | en_US |
dc.type | Dissertation | en_US |
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