Disordering of the (3x1) reconstruction on Si(113) and the chiral three-state Potts model

dc.contributor.authorYang, Y.-N.
dc.contributor.authorWilliams, Ellen D.
dc.contributor.authorPark, R. L.
dc.contributor.authorBartelt, N. C.
dc.contributor.authorEinstein, Theodore L.
dc.date.accessioned2024-03-11T15:55:11Z
dc.date.available2024-03-11T15:55:11Z
dc.date.issued1990
dc.description.abstractWe have used high-resolution low-energy electron diffraction to study the disordering of the (3x1) reconstruction on Si(113). We find that the reconstruction disorders via a continuous transition at approximately 850 K. Above the transition temperature the positions of the superlattice diffraction beams shift away from their commensurate positions. The shift is proportional to the broadening of the beams, as expected from basic scaling arguments for a system in the chiral three-state Potts-model universality class.
dc.description.urihttps://doi.org/10.1103/PhysRevLett.64.2410
dc.identifierhttps://doi.org/10.13016/qsuw-jzsv
dc.identifier.citationYang, Williams, et al, Disordering of the (3x1) reconstruction on Si(113) and the chiral three-state Potts model. Physical Review Letters, 64, 2410-2413, 1990.
dc.identifier.urihttp://hdl.handle.net/1903/32279
dc.publisherAmerican Physical Society
dc.titleDisordering of the (3x1) reconstruction on Si(113) and the chiral three-state Potts model
dc.typeArticle

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