HOTSPOT REMEDIATION USING GERMANIUM SELF COOLING TECHNOLOGY

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dc.contributor.advisorBar-Cohen, Avramen_US
dc.contributor.authorNochetto, Horacioen_US
dc.contributor.departmentMechanical Engineeringen_US
dc.contributor.publisherDigital Repository at the University of Marylanden_US
dc.contributor.publisherUniversity of Maryland (College Park, Md.)en_US
dc.date.accessioned2011-07-06T05:52:58Z
dc.date.available2011-07-06T05:52:58Z
dc.date.issued2011en_US
dc.description.abstractLocalized thermoelectric "self cooling" in semiconductor materials is among the most promising approaches for the remediation of on-chip hot spots resulting from the shrinking feature sizes and faster switching speeds of nanoelectronic components. Self cooling in a germanium chip is investigated, using 3-dimensional, thermal-electric, coupled numerical simulations, for a range of systems and geometric parameters. The results suggest that localized cooling, associated with the introduction of an electric current on the back surface of a germanium chip, can effectively reduce the hot spot temperature rise on the active side of the chip. It was found that self cooling in a 100µm thick chip could provide between 3.9ºC and 4.5ºC hotspot temperature reduction. When using a germanium layer above an electrically insulated silicon layer, self-cooling was found to yield an additional 1ºC to 2º C temperature reduction. A streamlined computational tool is developed to facilitate the identification of optimal cooling parameters.en_US
dc.identifier.urihttp://hdl.handle.net/1903/11526
dc.subject.pqcontrolledMechanical Engineeringen_US
dc.subject.pquncontrolledElectronic Coolingen_US
dc.subject.pquncontrolledHeat Transferen_US
dc.subject.pquncontrolledHot Spotsen_US
dc.subject.pquncontrolledSelf Coolingen_US
dc.subject.pquncontrolledThermoelectricen_US
dc.titleHOTSPOT REMEDIATION USING GERMANIUM SELF COOLING TECHNOLOGYen_US
dc.typeThesisen_US

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