Quantum Dots in Photonic Crystals for Hybrid Integrated Silicon Photonics

Abstract

Quantum dots are excellent sources of on-demand single photons and can function as stable quantum memories. Additionally, advanced fabrication techniques of III-V materials and various hybrid integration methods make quantum dots an ideal candidate for integration into fiber- and silicon-based photonic circuits. However, efficiently extracting and integrating quantum dot emissions into fiber- and silicon-based photonic circuits, particularly with high efficiency and low power consumption, presents a continued challenge. This dissertation addresses this challenge by utilizing photonic crystals to couple quantum dot emissions into fiber- and silicon-based photonic circuits. In this dissertation, we first demonstrate an efficient fiber-coupled single photon source at the telecom C-band using InAs/InP quantum dots coupled to a nanobeam photonic crystal. The tapered nanobeam structure facilitates directional emission that is mode-matched to a lensed fiber, resulting in a collection efficiency of up to 65% from the nanobeam to a single-mode fiber. Using this approach, we demonstrate a bright single photon source with a 575 ± 5 Kcps count rate. Additionally, we observe a single photon purity of 0.015 ± 0.03 and Hong-Ou Mandel interference from emitted photons with a visibility of 0.84 ± 0.06. A high-quality factor photonic crystal cavity is needed to further improve the brightness of the single-photon source through Purcell enhancement. However, photonic crystal cavities often suffer from low-quality factors due to fabrication imperfections that create surface states and optical absorption. To address this challenge, we employed atomic layer deposition-based surface passivation of the InP photonic crystal nanobeam cavities to improve the quality factor. We demonstrated 140% higher quality factors by applying a coating of Al2O3 via atomic layer deposition to terminate dangling bonds and reduce surface absorption. Additionally, changing the deposition thickness enabled precise tuning of the cavity mode wavelength without compromising the quality factor. This Al2O3 atomic layer deposition approach holds great promise for optimizing nanobeam cavities, which are well-suited for integration with a wide range of photonic applications. Finally, we propose a hybrid Si-GaAs photonic crystal cavity design that operates at telecom wavelengths and can be fabricated without the need for careful alignment. The hybrid cavity consists of a patterned silicon waveguide that is coupled to a wider GaAs slab featuring InAs quantum dots. We show that by changing the width of the silicon cavity waveguide, we can engineer hybrid modes and control the degree of coupling to the active material in the GaAs slab. This provides the ability to tune the cavity quality factor while balancing the device’s optical gain and nonlinearity. With this design, we demonstrate cavity mode confinement in the GaAs slab without directly patterning it, enabling strong interaction with the embedded quantum dots for applications such as low-power-threshold lasing and optical bistability (156 nW and 18.1 µW, respectively). In addition to classical applications, this cavity is promising for alignment-free, large-scale integration of single photon sources in a silicon chip.