Development of a Deep Silicon Phase Fresnel Lens Using Grayscale Lithography and Deep Reactive Ion Etching
| dc.contributor.advisor | Ghodssi, Professor Reza | en_US |
| dc.contributor.author | Morgan, Brian C. | en_US |
| dc.contributor.department | ISR | en_US |
| dc.date.accessioned | 2007-05-23T10:15:40Z | |
| dc.date.available | 2007-05-23T10:15:40Z | |
| dc.date.issued | 2004 | en_US |
| dc.description.abstract | A phase Fresnel lens (PFL) could achieve higher sensitivity and angular resolution in astronomical observations than the current generation of gamma and hard x-ray instruments. For ground tests of a PFL system, silicon lenses must be fabricated on the micro-scale with controlled profiles to enable high lens efficiency. Thus, two MEMS-based technologies, gray-scale lithography and deep reactive ion etching (DRIE), are extended to create multiple controlled step heights in silicon on the necessary scale. A Gaussian approximation is introduced as a method of predicting a photoresist gray level height given the amount of transmitted light through a gray-scale optical mask. Etch selectivity during DRIE is then accurately controlled by introducing an oxygen-only step to a standard Bosch cycle to produce the desired scaling factor between the photoresist and silicon profiles. Finally, a profile evaluation method is developed to calculate the expected efficiency of measured silicon profiles. Calculated efficiencies above 87% have been achieved. | en_US |
| dc.format.extent | 2325073 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.identifier.uri | http://hdl.handle.net/1903/6455 | |
| dc.language.iso | en_US | en_US |
| dc.relation.ispartofseries | ISR; MS 2004-3 | en_US |
| dc.title | Development of a Deep Silicon Phase Fresnel Lens Using Grayscale Lithography and Deep Reactive Ion Etching | en_US |
| dc.type | Thesis | en_US |
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