NEW MATERIAL FOR ELIMINATING LINEAR ENERGY TRANSFER SENSITIVITIES IN DEEPLY SCALED CMOS TECHNOLOGIES SRAM CELLS

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dc.contributor.advisorPeckerar, Martin Cen_US
dc.contributor.authorKanyogoro, Esau Nderituen_US
dc.contributor.departmentElectrical Engineeringen_US
dc.contributor.publisherDigital Repository at the University of Marylanden_US
dc.contributor.publisherUniversity of Maryland (College Park, Md.)en_US
dc.date.accessioned2010-07-02T06:04:01Z
dc.date.available2010-07-02T06:04:01Z
dc.date.issued2010en_US
dc.description.abstractAs technology scales deep in submicron regime, CMOS SRAM memories have become increasingly sensitive to Single-Event Upset sensitivity. Key technological factors that impact Single-Event Upset sensitivity are gate length, gate and drain areas and the power supply voltage all of which impact transistor's nodal capacitance. In this work, I present engineering requirement studies, which show for the first time, the tread of Single-Event Upset sensitivity in deeply scaled SRAM cells. To mitigate the Single-Event Upset sensitivity, a novel approach is presented, illustrating exactly how material defects can be managed in a way that sets electrical resistance of the material as desired. A thin-film high-resistance value ranging from 2kΩ/-3.6MΩ/, and TCR of negative 0.0016%/˚C is presented. A defect model is presented that agrees well with the experimental results. These resistors are used in the cross-coupled latches; to decouple the latch nodes and delay the regenerative action of the cell, thus hardening against single even upset (SEU).en_US
dc.identifier.urihttp://hdl.handle.net/1903/10380
dc.subject.pqcontrolledEngineering, Electronics and Electricalen_US
dc.subject.pquncontrolledDX Centersen_US
dc.subject.pquncontrolledLinear Energy Transferen_US
dc.subject.pquncontrolledSingle Event Effectsen_US
dc.subject.pquncontrolledSingle-Event Upsetsen_US
dc.subject.pquncontrolledTemperature Coefficient of Temperatureen_US
dc.subject.pquncontrolledThin-film High-Sheet Rhoen_US
dc.titleNEW MATERIAL FOR ELIMINATING LINEAR ENERGY TRANSFER SENSITIVITIES IN DEEPLY SCALED CMOS TECHNOLOGIES SRAM CELLSen_US
dc.typeDissertationen_US

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