Kinetic-thermodynamic model for carbon incorporation during step-flow growth of GaN by metalorganic vapor phase epitaxy

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dc.contributor.authorInatomi, Y.
dc.contributor.authorKangawa, Y.
dc.contributor.authorPimpinelli, Alberto
dc.contributor.authorEinstein, Theodore L.
dc.date.accessioned2024-03-11T15:55:27Z
dc.date.available2024-03-11T15:55:27Z
dc.date.issued2019
dc.description.abstractRelationships between concentration of unintentionally doped carbon in GaN and its metalorganic vapor phase epitaxy conditions were investigated theoretically. A kinetic-thermodynamic model which considers kinetic behavior of adsorbed atoms on vicinal surface was proposed.
dc.description.urihttps://doi.org/10.1103/PhysRevMaterials.3.013401
dc.identifierhttps://doi.org/10.13016/xiyw-jh7t
dc.identifier.citationInatomi, Kangawa, et al. Kinetic-thermodynamic model for carbon incorporation during step-flow growth of GaN by metalorganic vapor phase epitaxy. Physical Review Materials, 3, 2019.
dc.identifier.urihttp://hdl.handle.net/1903/32354
dc.publisherAmerican Physical Society
dc.titleKinetic-thermodynamic model for carbon incorporation during step-flow growth of GaN by metalorganic vapor phase epitaxy
dc.typeArticle

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