NOVEL QUASI-FREESTANDING EPITAXIAL GRAPHENE ELECTRON SOURCE HETEROSTRUCTURES FOR X-RAY GENERATION

Abstract

Graphene, the 2D allotrope of carbon, boasts numerous exceptional qualities like strength, flexibility, and conductivity unmatched for its scale, and amongst its lesser-known capabilities is electron emission at temperatures and electric fields too low to allow for conventional thermionic or field emission sources to function. Driven by the mechanism of Phonon-Assisted Electron Emission (PAEE), planar microstructures fabricated from quasi-freestanding epitaxial graphene (QEG) on silicon carbide have exhibited emission currents of up to 8.5 μA at temperatures and applied fields as low as 200 C and 1 kV/cm, orders of magnitude below conventional electron source requirements.These emission properties can be influenced through variations in microstructure design morphology, and performance is controllable via device temperature and applied field in the same manner as thermionic or field emission sources. As 2D planar devices, graphene microstructure electron emitters can also be encapsulated with a thermally evaporated oxide, granting electrical isolation and environmental resistance, and can even exhibit emission current enhancement under these conditions. Graphene electron emitters expressed as heterostructure material stacks could see implementation as electron emission sources in environments or devices where conventional thermionic or field emission sources can’t be supported due to thermal, power system, or physical size limitations, the presence of contaminants, or even poor vacuum containment. An explorable application could see an oxide-encapsulated graphene electron source paired with a layered interaction-emission anode to create a micron-scale vertical alignment x-ray source with no need of vacuum containment. We investigate these properties with using hydrogen-intercalated quasi-freestanding bilayer epitaxial graphene, a rare and difficult to manufacture formulation that allows the graphene to behave as if it were a freestanding structure, while still benefiting from the macro-scale mechanical strength and fabrication process compatibility afforded by its silicon carbide substrate. The quasi-freestanding nature of the graphene limits substrate phonon interactions, allowing the graphene phonon-electron interactions to dominate, in turn empowering the PAEE mechanic. Our devices benefit from an ease of interaction that is untenable for processes not employing QEG, with the speed and simplicity of fabrication being a hallmark of our investigations. We begin our exploration of how the PAEE mechanism itself can be influenced in our designs, and how process and fabrication optimizations can be leveraged for device applications. Graphene’s role in the fields of microelectronics, condensed matter physics, and materials science is still novel, and rapidly expanding, and our investigations explore a unique facet of this wonder material’s capabilities.