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dc.contributor.advisorKane, Bruce Een_US
dc.contributor.advisorDrew, Howard Den_US
dc.contributor.authorSun, Luyanen_US
dc.date.accessioned2009-01-24T07:24:59Z
dc.date.available2009-01-24T07:24:59Z
dc.date.issued2008-11-21en_US
dc.identifier.urihttp://hdl.handle.net/1903/8888
dc.description.abstractI incorporate an Al-AlO<sub>x</sub>-Al single-electron transistor (SET) as the gate of a narrow (~ 100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET). Near the MOSFET channel conductance threshold, Coulomb blockade oscillations are observed at about 20 millikelvin, revealing the formation of a Si SET at the Si/SiO<sub>2</sub> interface. Based on a simple electrostatic model, the two SET islands are demonstrated to be closely aligned, with an inter-island capacitance approximately equal to 1/3 of the total capacitance of the Si transistor island, indicating that the Si transistor is strongly coupled to the Al transistor. This vertically-aligned Al and Si SET system is used to characterize the background charges in a MOS structure at low temperature, which may also be sources of decoherence for Si quantum computation. A single charge defect, probably either a single charge trap at the Si/SiO<sub>2</sub> interface or a single donor in the Si substrate, is detected and the properties of the defect are studied in this dissertation.en_US
dc.format.extent5526016 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.titleCHARACTERIZATION OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES AT LOW TEMPERATURES USING SELF-ALIGNED AND VERTICALLY COUPLED ALUMINUM AND SILICON SINGLE-ELECTRON TRANSISTORSen_US
dc.typeDissertationen_US
dc.contributor.publisherDigital Repository at the University of Marylanden_US
dc.contributor.publisherUniversity of Maryland (College Park, Md.)en_US
dc.contributor.departmentPhysicsen_US
dc.subject.pqcontrolledPhysics, Condensed Matteren_US
dc.subject.pquncontrolledquantum computationen_US
dc.subject.pquncontrolledcoupled Al/Si single-electron transistorsen_US


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