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dc.contributor.advisorGoldsman, Neilen_US
dc.contributor.authorGeil, Bruceen_US
dc.date.accessioned2008-06-20T05:39:19Z
dc.date.available2008-06-20T05:39:19Z
dc.date.issued2008-05-06en_US
dc.identifier.urihttp://hdl.handle.net/1903/8244
dc.description.abstractThe fabrication and modeling of Silicon Carbide (SiC) Bipolar Junction Transistors (BJT) and diodes for the development of high temperature power switches is presented. Silicon carbide processing including etching, implantation and ohmic contact fabrication are discussed. A 1-D computer model for SiC devices is developed that allows for temperature dependent calculations of current and potential in the device. The techniques that provide a unique ability to use either standard methods or the quasi Fermi method are provided. The modeled results are compared to experimental data and show very close correlation at room temperature but rapidly diverge at higher temperatures. Several temperature dependent variables that affect the model results are investigated to determine which calculations, if modified, would most improve the model accuracy. A perspective for future optimization of the model is given with an emphasis on the ability to calculate BJT currents.en_US
dc.format.extent2859093 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.titleFABRICATION AND MODELING OF SILICON CARBIDE BIPOLAR JUNCTION TRANSISTORSen_US
dc.typeThesisen_US
dc.contributor.publisherDigital Repository at the University of Marylanden_US
dc.contributor.publisherUniversity of Maryland (College Park, Md.)en_US
dc.contributor.departmentElectrical Engineeringen_US
dc.subject.pqcontrolledEngineering, Electronics and Electricalen_US
dc.subject.pqcontrolledEngineering, Electronics and Electricalen_US


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