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The Impact of Interface States on Sub-Threshold Leakage and Power Management in CMOS Devices and Circuits

dc.contributor.advisorPeckerar, Martinen_US
dc.contributor.authorWienke, James Patricken_US
dc.date.accessioned2007-09-28T14:58:36Z
dc.date.available2007-09-28T14:58:36Z
dc.date.issued2007-07-13en_US
dc.identifier.urihttp://hdl.handle.net/1903/7235
dc.description.abstractSpace applications expose electronic systems to levels of radiation that are damaging to the individual components. Considerable effort has gone into the "hardening" of electronic components against total-dose damage by ionizing radiation. This thesis explores the degree to which commercial-of-the-shelf parts are affected by ionizing radiation. In particular, concentration is on the effect of interface state generation resulting from ionizing radiation on overall device performance. Various sized 0.13μm MOSFET devices were simulated, fabricated, irradiated and tested. Significant increases in the sub-threshold swing and leakage current were observed following a 1MRad total-dose gamma ray irradiation. Subsequently, logic inverter structures exhibited increased sub-threshold swing and total power dissipation following simulations that modeled increasing radiation exposure. Finally, an 11-stage ring oscillator experiment was conducted. A decrease in power for increased irradiations was observed in previous work [49], but without explanation. This work attempts to provide a logical framework for understanding this observation.en_US
dc.format.extent2186646 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.titleThe Impact of Interface States on Sub-Threshold Leakage and Power Management in CMOS Devices and Circuitsen_US
dc.typeThesisen_US
dc.contributor.publisherDigital Repository at the University of Marylanden_US
dc.contributor.publisherUniversity of Maryland (College Park, Md.)en_US
dc.contributor.departmentElectrical Engineeringen_US
dc.subject.pqcontrolledEngineering, Electronics and Electricalen_US
dc.subject.pquncontrolledRadiation-Induced Interface Statesen_US
dc.subject.pquncontrolledPower Dissipationen_US
dc.subject.pquncontrolledCMOS Devicesen_US
dc.subject.pquncontrolledCMOS Logic Invertersen_US
dc.subject.pquncontrolledGamma Irradiationen_US


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