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A Comparative Study of Reactor Designs for the Production of Graded Films with Applications to Combinatorial CVD

dc.contributor.authorSreenivasan, Ramaswamyen_US
dc.contributor.authorAdomaitis, Raymond A.en_US
dc.contributor.authorRubloff, Gary W.en_US
dc.date.accessioned2007-05-23T10:19:07Z
dc.date.available2007-05-23T10:19:07Z
dc.date.issued2007en_US
dc.identifier.urihttp://hdl.handle.net/1903/6618
dc.description.abstractSegmented CVD reactor designs enabling spatial control of across-wafer gas phase composition were evaluated for depositing graded films suitable for combinatorial studies. Specifically two reactor designs were constructed and evaluated with experiments and response surface model (RSM) based analysis to quantify the reactor performance in terms of film thickness uniformity, sensitivity to adjustable reactor operating conditions, range of thickness over which uniformity could be achieved and each reactor ability to control the thickness gradient across the wafer surface. Design features distinguishing the two reactor systems and their influence on gradient control versus deposition rate performance are summarized. RS models relating wafer state properties to process recipes are shown to be effective tools to quantify, qualify and compare different reactor designs.en_US
dc.format.extent660787 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoen_USen_US
dc.relation.ispartofseriesISR; TR 2007-3en_US
dc.subjectNext-Generation Product Realization Systemsen_US
dc.titleA Comparative Study of Reactor Designs for the Production of Graded Films with Applications to Combinatorial CVDen_US
dc.typeTechnical Reporten_US
dc.contributor.departmentISRen_US


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