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Modeling and Reduction with Applications to Semiconductor Processing

dc.contributor.advisorKrishnaprasad, P.S.en_US
dc.contributor.authorNewman, Andrew J.en_US
dc.date.accessioned2007-05-23T10:09:03Z
dc.date.available2007-05-23T10:09:03Z
dc.date.issued1999en_US
dc.identifier.urihttp://hdl.handle.net/1903/6117
dc.description.abstractThis thesis consists of several somewhat distinct but connected parts, withan underlying motivation in problems pertaining to control and optimizationof semiconductor processing. The first part (Chapters 3 and 4) addressesproblems in model reduction for nonlinear state-space control systems. In1993, Scherpen generalized the balanced truncation method to the nonlinearsetting. However, the Scherpen procedure is not easily computable and hasnot yet been applied in practice. <p>We offer a method for computing a workingapproximation to the controllability energy function, one of the mainobjects involved in the method. Moreover, we show that for a class ofsecond-order mechanical systems with dissipation, under certain conditionsrelated to the dissipation, an exact formula for the controllabilityfunction can be derived. We then present an algorithm for a numericalimplementation of the Morse-Palais lemma, which produces a local coordinatetransformation under which a real-valued function with a non-degeneratecritical point is quadratic on a neighborhood of the critical point.<p>Application of the algorithm to the controllabilty function plays a key rolein computing the balanced representation. We then apply our methods andalgorithms to derive balanced realizations for nonlinear state-space modelsof two example mechanical systems: a simple pendulum and a double pendulum. <P>The second part (Chapter 5) deals with modeling of rapid thermal chemicalvapor deposition (RTCVD) for growth of silicon thin films, viafirst-principles and empirical analysis. We develop detailedprocess-equipment models and study the factors that influence depositionuniformity, such as temperature, pressure, and precursor gas flow rates,through analysis of experimental and simulation results. We demonstratethat temperature uniformity does not guarantee deposition thicknessuniformity in a particular commercial RTCVD reactor of interest. <p>In thethird part (Chapter 6) we continue the modeling effort, specializing to acontrol system for RTCVD heat transfer. We then develop and apply ad-hocversions of prominent model reduction approaches to derive reduced modelsand perform a comparative study.en_US
dc.format.extent7351927 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoen_USen_US
dc.relation.ispartofseriesISR; PhD 1999-5en_US
dc.relation.ispartofseriesCDCSS; PhD 1999-2en_US
dc.subjectlinear systemsen_US
dc.subjectnonlinear systemsen_US
dc.subjectmodel reductionen_US
dc.subjectbalanced realizationsen_US
dc.subjectproper orthogonal decompositionen_US
dc.subjectcomputationen_US
dc.subjectstochastic excitationen_US
dc.subjectMorse lemmaen_US
dc.subjectprocess modelingen_US
dc.subjectchemical vapor depositionen_US
dc.subjectrapid thermal processingen_US
dc.subjectIntelligent Control Systemsen_US
dc.titleModeling and Reduction with Applications to Semiconductor Processingen_US
dc.typeDissertationen_US
dc.contributor.departmentISRen_US
dc.contributor.departmentCDCSSen_US


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