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Analysis of Heat Transfer in a Chemical Vapor Deposition Reactor: An Eigenfunction Expansion Solution Approach

dc.contributor.advisorAdomaitis, Raymond A.en_US
dc.contributor.authorChang, Hsiao-Yungen_US
dc.contributor.authorAdomaitis, Raymond A.en_US
dc.date.accessioned2007-05-23T10:04:30Z
dc.date.available2007-05-23T10:04:30Z
dc.date.issued1997en_US
dc.identifier.urihttp://hdl.handle.net/1903/5890
dc.description.abstractA numerical solution procedure combining several weighted residual methods and based on global trial function expansion is developed to solve a model for the steady state gas flow field and temperature distribution in a low-pressure chemical vapor deposition reactor. The enthalpy flux across the wafer/gas boundary is calculated explicitly and is found to vary significantly as a function of wafer position. An average heat transfer coefficient is estimated numerically and is compared to typical radiative heat transfer rates in the system. The convergence properties of the discretization method developed also are discussed.en_US
dc.format.extent740904 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoen_USen_US
dc.relation.ispartofseriesISR; TR 1997-84en_US
dc.subjectmathematical modelingen_US
dc.subjectsimulationen_US
dc.subjectfinite elementsen_US
dc.subjectmanufacturingen_US
dc.subjectchemical vapor depositionen_US
dc.subjecteigenfunction expansionen_US
dc.subjectweighted residual methodsen_US
dc.subjectcollocationen_US
dc.subjectIntelligent Control Systemsen_US
dc.titleAnalysis of Heat Transfer in a Chemical Vapor Deposition Reactor: An Eigenfunction Expansion Solution Approachen_US
dc.typeTechnical Reporten_US
dc.contributor.departmentISRen_US


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