Show simple item record

Model Reduction for RTCVD Optimization

dc.contributor.authorTheodoropoulou, A.en_US
dc.contributor.authorAdomaitis, Raymond A.en_US
dc.contributor.authorZafiriou, E.en_US
dc.date.accessioned2007-05-23T10:02:07Z
dc.date.available2007-05-23T10:02:07Z
dc.date.issued1996en_US
dc.identifier.urihttp://hdl.handle.net/1903/5782
dc.description.abstractA model of a three-zone Rapid Thermal Chemical Vapor Deposition (RTCVD) system is developed to study the effects of spatial wafer temperature patterns on polysilicon deposition uniformity. A sequence of simulated runs is performed, varying the lamp power profiles so that different wafer temperature modes are excited. The dominant spatial wafer thermal modes are extracted via Proper Orthogonal Decomposition and subsequently used as a set of trial functions to represent both the wafer temperature and deposition thickness. A collocation formulation of Galerkin's method is developed to discretize the original modeling equations, giving a low-order model which looses little of the original, high-order model's fidelity. We make use of the excellent predictive capabilities of the reduced model to optimize power inputs to the lamp banks to achieve a desired polysilicon deposition thickness at the end of a run with minimal deposition spatial nonuniformity.en_US
dc.format.extent1098581 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoen_USen_US
dc.relation.ispartofseriesISR; TR 1996-64en_US
dc.subjectchemical process controlen_US
dc.subjectmathematical modelingen_US
dc.subjectsensingen_US
dc.subjectsimulationen_US
dc.subjectIntelligent Control Systemsen_US
dc.titleModel Reduction for RTCVD Optimizationen_US
dc.typeTechnical Reporten_US
dc.contributor.departmentISRen_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record