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RTCVD Model Reduction: A Collocation on Empirical Eigenfunctions Approach

dc.contributor.authorAdomaitis, Raymond A.en_US
dc.date.accessioned2007-05-23T09:59:23Z
dc.date.available2007-05-23T09:59:23Z
dc.date.issued1995en_US
dc.identifier.urihttp://hdl.handle.net/1903/5651
dc.description.abstractA model of a three-zone Rapid Thermal Chemical Vapor Deposition (RTCVD) system is developed to study the effects of spatial wafer temperature patterns and gas-phase reactant depletion on polysilicon deposition uniformity. A sequence of simulated runs is performed, varying the lamp power profiles so that different temperature modes are excited. The dominant spatial wafer thermal modes are extracted via proper orthogonal decomposition. A collocation formulation of Galerkin's method is used to discretize the original modeling equations, giving a low-order model which loses little of the original's fidelity. We make use of the excellent predictive capabilities of the reduced model in a real-time RTP system simulator.en_US
dc.format.extent686979 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoen_USen_US
dc.relation.ispartofseriesISR; TR 1995-64en_US
dc.subjectmathematical modelingen_US
dc.subjectsimulationen_US
dc.subjectsignal processingen_US
dc.subjectdistributed parameter systemsen_US
dc.subjectIntelligent Control Systemsen_US
dc.titleRTCVD Model Reduction: A Collocation on Empirical Eigenfunctions Approachen_US
dc.typeTechnical Reporten_US
dc.contributor.departmentISRen_US


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