Electrical Properties of a Tube-in-a-Tube Semiconductor
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Abstract
Tube-in-a-tube (Tube^2) nanostructures were synthesized through the outer-wall
selective covalent functionalization of double-walled carbon nanotubes (DWCNTs) at
high functional densities. Upon functionalization, the properties of individual walls
within the structure decouple resulting in an electrically insulating functional outer
tube while the inner tube retains exceptional CNT properties. The exceptional
electrical properties of Tube^2 semiconductor structures were demonstrated for
applications that include molecular and biological sensors and patterning of CNTbased
structures with electronic type specificity.
Tube^2 thin film transistor (TFT) sensors exhibited simultaneous ultrahigh sensitivity
and selectivity towards chemical and biological targets. Carboxylic acid terminated
Tube^2 sensors displayed an NH3 sensitivity of 60 nM, which is comparable with
small molecule aqueous solution detection using state-of-the-art TFT sensors while
simultaneously attaining 6,000 times higher chemical selectivity towards a variety of
amine containing analyte molecules over carboxylic acids. Similarly, 23-base
ii
oligonucleotide terminated Tube^2 sensors demonstrated concomitant sensitivity
down to 5 nM towards their complementary sequence without amplification
techniques and single mismatch selectivity without the use of a gate electrode.
Unique sensor architectures can be designed with the requirement of a gate electrode,
such as the creation of millimeter-scale point sensors.
The optical features and unique structural features of Tube^2 thin films were also
exploited to address the challenge of patterning CNT nanostructures with electronic
type specificity. Patterned dot arrays and conductive pathways were created on an
initially insulating Tube^2 thin film by tuning the resonance of the direct-writing
laser with the electronic type of the inner tube (i.e., metallic or semiconducting). The
successful patterning of Tube^2 thin films was unambiguously confirmed with in situ
Raman spectral imaging and electrical characterization.
Furthermore, a hybrid 2-D carbon nanostructure comprised of a functionalized
graphene that covers a semiconducting (6,5) SWCNT network (fG/sSWCNT) was
developed. The hybrid fG/sSWCNT nanostructure exhibits similar structural and
electrical properties as a semiconducting Tube^2 thin film, but possesses a
transconductance that is an order of magnitude larger than Tube^2 and ON/OFF
ratios as high as 5400 without the useful of further processing steps such as electrical
breakdown.