UMD Theses and Dissertations
Permanent URI for this collectionhttp://hdl.handle.net/1903/3
New submissions to the thesis/dissertation collections are added automatically as they are received from the Graduate School. Currently, the Graduate School deposits all theses and dissertations from a given semester after the official graduation date. This means that there may be up to a 4 month delay in the appearance of a given thesis/dissertation in DRUM.
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Item COMBINATORIAL DISCOVERY OF A MORPHOTROPIC PHASE BOUNDARY IN A LEAD-FREE PIEZOELECTRIC MATERIAL(2008-08-07) Fujino, Shigehiro; Takeuchi, Ichiro; Wuttig, Manfred; Material Science and Engineering; Digital Repository at the University of Maryland; University of Maryland (College Park, Md.)BiFeO3 (BFO) is known to display rich and intricate multiferroic and chemical properties. It has high switchable polarization and piezoelectric properties similar to PbTiO3, but it also suffers from high coercive fields and high leakage currents. This has prompted investigations of doped-BFO as novel solid solutions which may emulate the performance of PbZr1-xTixO3 (PZT) in the composition range of 0.48 < x < 0.52, where a morphotropic phase boundary (MPB) resides and displays substantially enhanced piezoelectric and ferroelectric properties. However neither an increase in electromechanical constants as a function of dopant concentration or domain structures indicative of a MPB piezoceramic had been reported in lead-free BFO-based systems prior to this work. There are some guidelines which predict the presence of MPBs, and one can explore novel compositions by systematically searching for similar structural transitions, Yet comprehensive mapping of compositions requires synthesis of an enormously large number of individual samples. We report on the discovery of a lead-free morphotropic (composition dependent, temperature independent) phase boundary with a simple perovskite structure. The combinatorial thin film strategy was used to identify a rhombohedral to pseudo-orthorhombic structural transition which exhibits a ferroelectric to antiferroelectric transition at approximately Bi0.86Sm0.14FeO3. At the morphtropic phase boundary, there is substantial enhancement in the dielectric and piezoelectric coefficient of Bi0.86Sm0.14FeO3 film is comparable to that of Pb Zr0.52Ti0.48O3 thin film. The discovered compound is a strong candidate if a lead-free piezoelectric material.Item Synthesis and characterization of multiferroic thin films(2008-07-02) Lim, Sung Hwan; Salamanca-Riba, Lourdes; Takeuchi, Ichiro; Material Science and Engineering; Digital Repository at the University of Maryland; University of Maryland (College Park, Md.)Multiferroic materials and multiferroic materials systems which simultaneously exhibit ferroelectricity and magnetism have attracted great attention because of their exotic physical properties and their potential applications which utilize coupling of magnetism and ferroelectricity. The goal of this thesis was to study multiferroic materials systems in thin film and multilayer forms in order to explore the possibility of fabricating room temperature thin film devices. In particular, we have focused on two types of multiferroic materials systems: 1) intrinsic multiferroic/magnetoelectric thin film materials and 2) magnetostrictive/ piezoelectric bilayer systems for investigation of the strain-mediated magnetoelectric (ME) effect. BiFeO3 is an intrinsic multiferroic which displays ferroelectricity and antiferromagnetism at room temperature, and thus of strong interest for ambient device applications. In this thesis, we have extensively investigated the role of microstructure on the properties of BiFeO3 thin films. We studied multiphase formation in Bi-Fe-O thin films, and found that formation of secondary phases such as α-Fe2O3, γ-Fe2O3, and Fe3O4 increased overall saturation magnetization and released the misfit strain of the BiFeO3 grains in the films. We have studied several aspects of the ME effect which are directly relevant to possible novel device applications. Electric field tunable spintronic devices using the ME effect have been proposed. In one such device configuration, the desired effect is electric field tuning of giant magnetoresistance or tunnel magnetoresistance through control of exchange bias via the ME effect. We have investigated the feasibility of such a device using exchange-biased Co/Pt multilayers on Cr2O3 thin films. The strain-mediated ME effect at the interface of magnetostrictive/ piezoelectric bilayers has been widely used to demonstrate magnetic field detection with extremely high sensitivity. Although the overall mechanism of such an effect is known, the details of the bilayer interfaces and how they affect the coupling is not understood. In order to directly observe the strain-mediated ME coupling effect, we fabricated bilayer thin film structures and performed in-situ dynamic observation of magnetic domains while an electric-field was being applied using Lorentz transmission electron microscopy. Electric-field induced motion of magnetic domain boundaries in the magnetostrictive layer was observed for the first time.