Theses and Dissertations from UMD

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New submissions to the thesis/dissertation collections are added automatically as they are received from the Graduate School. Currently, the Graduate School deposits all theses and dissertations from a given semester after the official graduation date. This means that there may be up to a 4 month delay in the appearance of a give thesis/dissertation in DRUM

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    TEMPERATURE DEPENDENCE OF THE GROWTH MODE DURING HOMOEPITAXY ON PATTERNED GALLIUM ARSENIDE (001); ATOMIC-SCALE MECHANISMS FOR UNSTABLE GROWTH.
    (2006-12-11) tadayyon-eslami, tabassom; Phaneuf, Raymond j; Material Science and Engineering; Digital Repository at the University of Maryland; University of Maryland (College Park, Md.)
    ABSTRACT Title of Document: TEMPERATURE DEPENDENCE OF THE GROWTH MODE DURING HOMOEPITAXY ON PATTERNED GALLIUM ARSENIDE (001); ATOMIC-SCALE MECHANISMS FOR UNSTABLE GROWTH. Tabassom Tadayyon-Eslami, Doctor of Philosophy, 2006 Directed By: Professor Raymond J. Phaneuf, Department of Materials Science and Engineering In this thesis we present an extensive investigation of instability in molecular beam epitaxial growth of GaAs(001) over a range of pattern periods, cell sizes, growth temperature and As2 flux. We find very good agreement with predictions of the continuum models of Sun, Guo and Grant [Phys. Rev. A 40, 6763(1989)] for the growth above ~540ºC and Lai and Das Sarma [Phys. Rev. Lett. 66, 2348 (1991)] for the growth below this temperature. Changing the growth temperature to lower than 540 ºC leads to the formation of ring-like protrusions in the [110] direction around pits patterned on the initial substrate, which are absent for growth at higher temperature. This change in growth mode occurs in the temperature range within in which both pre-roughening transition and surface reconstruction transition (β2(2x4) to c(4x4)) also occur. We rule out the possibility of preroughening and the change in surface reconstruction as the reason for this growth mode change, based on the As2 flux dependence of the growth mode transition temperature. Based on our atomic force microcopy characterization of the surface morphology during early the stage of growth, we propose a physically based model for the growth, which involves a competition between decreased adatom collection efficiency during growth on small terraces and a small anisotropic multiple step Ehrlich-Schwoebel barrier at the pit edge. This provides a physical basis for the nonlinear term in the continuum models proposed by Sun et. al., and Lai and Das Sarma, whose predictions qualitatively describe our experimental observations.
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    Ab initio Lattice Dynamics and Infrared Dielectric Response
    (2004-11-24) lawler, hadley Mark; Shirley, Eric L.; Drew, H. Dennis; Physics; Digital Repository at the University of Maryland; University of Maryland (College Park, Md.)
    Methods for theoretically evaluating lattice dynamics, anharmonic effects and related optical properties from first principles are designed and implemented. Applications of density-functional theory and the pseudopotential approximation are adapted, via the Born-Oppenheimer approximation, the Hellmann-Feynman force theorem, and wave-commensurate supercells, to a direct calculation of the Born-von Karman force constants. With a symmetry analysis and interpolation of Born-von Karman force constants, the complete phonon spectra are obtained for the cubic systems Ar, Si, Ge, and diamond, and for the stacked hexagonal system, graphite. The phonon spectra for the polar materials GaAs and GaP, in which the degeneracy between longitudinal and transverse optical modes is lifted, are also calculated. The splitting is a consequence of the macroscopic field associated with long-range Coulombic interactions and longitudinal displacements. Diagramatically-derived expressions for the finite lifetime of the Raman mode arising from phonon-phonon interactions are calculated for Si, Ge, and diamond from first principles, and agree with experiment to within uncertainty. The infrared absorption spectra of GaAs and GaP are calculated from first principles through the phonon anharmonic self-energy (phonon-phonon interaction) and the Born effective charges (photon-phonon interaction). Several aspects of the spectra are in detailed agreement with the experimental spectra, including the strong temperature dependence of the far-infrared absorption due to the onset of difference processes; the linewidth and asymmetric lineshape of the reststrahlen; the spectral structure of the absorption by two-phonon modes, and overall oscillator strengths. The theory allows for the identification of narrow spectral transmission bands with an ionic mass mismatch in the case of GaP. Analytic and complete calculations are performed for the ion-ion displacement correlation function in solid Ar, and agree well. The correlations are evaluated for arbitrary lattice vector and Cartesian displacement directions, and their pressure dependence leads to the conjecture that anharmonic effects are less prominent at higher pressures.
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    Evolution of Patterned Gallium Arsenide (001) surface subjected to Molecular Beam Epitaxy Growth
    (2004-05-14) Shah, Sonam Shantilal; Phaneuf, Raymond J; Material Science and Engineering
    We describe here a study of lateral length scale dependence of the transient evolution of surface corrugation during MBE growth of alternating layers of AlAs and GaAs with individual layer thickness of 50 nm (approximate configuration as used in the distributed Bragg reflectors of a VCSEL) or GaAs layers onto the patterned GaAs (001) substrates. By patterning the surface with arrays of cylindrical pits of varying diameter and spacing, we were able to study selectively the changes which occur as a function of lateral period over a range of corrugation amplitudes. The evolution in the surface morphology after various stages of growth was characterized in air with AFM. We show that there exists a critical length scale which separates regimes of amplification and decay of corrugation amplitude with further growth. We compare our observations with the predictions of existing continuum models.