Physics Theses and Dissertations

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    EXPLORATION OF NOVEL METHODS FOR THE FABRICATION AND CHARACTERIZATION OF ORGANIC FIELD-EFFECT TRANSISTORS AND EXAMINATION OF FACTORS INFLUENCING OFET PERFORMANCE
    (2009) Southard, Adrian Edward; Fuhrer, Michael S.; Chemical Physics; Digital Repository at the University of Maryland; University of Maryland (College Park, Md.)
    This thesis explores novel methods for fabricating organic field effect transistors (OFETs) and characterizing OFET devices. Transfer printing is a promising process for fabricating organic thin-film devices. In this work, a transfer-printing process is developed for the polymer organic semiconductor P3HT. Pre-patterned P3HT is printed onto different dielectrics such as PMMA, polystyrene and polycarbonate. The P3HT layer is spun on a smooth silicon interface made hydrophobic by treatment with octyltrichlorosilane, which functions as a release layer. This method has distinct advantages over standard OFET fabrication methods in that 1) the active layer can be pre-patterned, 2) the solvent for the P3HT need not be compatible with the target substrate, and 3) the electrical contact formed mimics the properties of top contacts but with the spatial resolution of bottom contacts. Transparent, conducting films of carbon nanotubes (CNTs) are prepared by airbrushing, and characterized optically and electronically. OFETs with CNT films as source and drain electrodes are fabricated using various patterning techniques, and the organic/CNT contact resistance is characterized. CNT films make transparent, flexible electrodes with contact resistance comparable to that found for Au bottom-contacted P3HT transistors and comparable to CNT-film bottom-contacted pentacene transistors with CNTs deposited by other less flexible methods. A transparent OFET is demonstrated using transfer printing for the assembly of an organic semiconductor (pentacene), CNT film source, drain, and gate electrodes, and polymer gate dielectric and substrate. The dependence of the conductance and mobility in pentacene OFETs on temperature, gate voltage, and source-drain electric field is studied. The data are analyzed by extending a multiple trapping and release model to account for lowering of the energy required to excite carriers into the valence band (Poole-Frenkel effect). The temperature-dependent conductivity shows activated behavior, and the activation energy is lowered roughly linearly with the square-root of electric field, as expected for the Poole-Frenkel effect. The gate voltage dependence of the activation energy is used to extract the trap density of states, in good agreement with other measurements in the literature.
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    Electronic transport in low dimensions: carbon nanotubes and mesoscopic silver wires
    (2008-12-08) Ghanem, Tarek Khairy; Fuhrer, Michael S.; Williams, Ellen D.; Physics; Digital Repository at the University of Maryland; University of Maryland (College Park, Md.)
    This thesis explores the physics of low-dimensional electronic conductors using two materials systems, carbon nanotubes (CNTs) and lithographically-defined silver nanowires. In order to understand the intrinsic electronic properties of CNTs, it is important to eliminate the contact effects from the measurements. Here, this is accomplished by using a conductive-tip atomic force microscope cantilever as a local electrode in order to obtain length dependent transport properties. The CNT-movable electrode contact is fully characterized, and is largely independent of voltage bias conditions, and independent of the contact force beyond a certain threshold. The contact is affected by the fine positioning of the cantilever relative to the CNT due to parasitic lateral motion of the cantilever during the loading cycle, which, if not controlled, can lead to non-monotonic behavior of contact resistance vs. force. Length dependent transport measurements are reported for several metallic and semiconducting CNTs. The resistance versus length R(L) of semiconducting CNTs is linear in the on state. For the depleted state R(L) is linear for long channel lengths, but non-linear for short channel lengths due to the long depletion lengths in one-dimensional semiconductors. Transport remains diffusive under all depletion conditions, due to both low disorder and high temperature. The study of quantum corrections to classical conductivity in mesoscopic conductors is an essential tool for understanding phase coherence in these systems. A long standing discrepancy between theory and experiment regards the phase coherence time, which is expected theoretically to grow as a power law at low temperatures, but is experimentally found to saturate. The origins of this saturation have been debated for the last decade, with the main contenders being intrinsic decoherence by zero-point fluctuations of the electrons, and decoherence by dilute magnetic impurities. Here, the phase coherence time in quasi-one-dimensional silver wires is measured. The phase coherence times obtained from the weak localization correction to the conductivity at low magnetic field show saturation, while those obtained from universal conductance fluctuations at high field do not. This indicates that, for these samples, the origin of phase coherence time saturation obtained from weak localization is extrinsic, due to the presence of dilute magnetic impurities.