Development of a Deep Silicon Phase Fresnel Lens using Gray-scale Lithography and Deep Reactive Ion Etching

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dc.contributor.advisorGhodssi, Rezaen_US
dc.contributor.authorMorgan, Brianen_US
dc.contributor.departmentElectrical Engineeringen_US
dc.date.accessioned2004-05-31T20:19:25Z
dc.date.available2004-05-31T20:19:25Z
dc.date.issued2004-04-22en_US
dc.description.abstractA phase Fresnel lens (PFL) could achieve higher sensitivity and angular resolution in astronomical observations than the current generation of gamma and hard x-ray instruments. For ground tests of a PFL system, silicon lenses must be fabricated on the micro-scale with controlled profiles to enable high lens efficiency. Thus, two MEMS-based technologies, gray-scale lithography and deep reactive ion etching (DRIE), are extended to create multiple controlled step heights in silicon on the necessary scale. A Gaussian approximation is introduced as a method of predicting a photoresist gray level height given the amount of transmitted light through a gray-scale optical mask. Etch selectivity during DRIE is then accurately controlled by introducing an oxygen-only step to a standard Bosch cycle to produce the desired scaling factor between the photoresist and silicon profiles. Finally, a profile evaluation method is developed to calculate the expected efficiency of measured silicon profiles. Calculated efficiencies above 87% have been achieved.en_US
dc.format.extent2684212 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.urihttp://hdl.handle.net/1903/240
dc.language.isoen_US
dc.relation.isAvailableAtDigital Repository at the University of Marylanden_US
dc.relation.isAvailableAtUniversity of Maryland (College Park, Md.)en_US
dc.subject.pqcontrolledEngineering, Electronics and Electricalen_US
dc.titleDevelopment of a Deep Silicon Phase Fresnel Lens using Gray-scale Lithography and Deep Reactive Ion Etchingen_US
dc.typeThesisen_US

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