Novel Approach and Methods for Optimizing Highly Sensitive Low Noise Amplifier CMOS IC Design for Congested RF Environments
Novel Approach and Methods for Optimizing Highly Sensitive Low Noise Amplifier CMOS IC Design for Congested RF Environments
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Date
2022-03-22
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Citation
Chung, J.; Iliadis, A.A. Novel Approach and Methods for Optimizing Highly Sensitive Low Noise Amplifier CMOS IC Design for Congested RF Environments. Electronics 2022, 11, 976.
Abstract
This work details the optimization and evaluation of a CMOS low-noise amplifier by developing a new algorithm for the 𝑔𝑚/𝐼𝐷 approach and combining with a modified figure of merit index method. The amplifier includes on-chip matching elements (such as IC inductors) for resonance at the targeted frequencies. The simulation results of the optimized LNA model showed scattering parameter 𝑆21 = 19.91 dB, noise figure NF = 3.54 dB and excellent linearity for third-order intermodulation parameter IIP3 = 5.89 dBm for the targeted frequency of 𝑓0 = 2.4 GHz.