Microbridge Formation for Low Resistance Interline Connection Using Pulsed Laser Techniques

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dc.contributor.advisorBernstein, Joseph Ben_US
dc.contributor.authorChung, Kuan-Jungen_US
dc.contributor.departmentMechanical Engineeringen_US
dc.contributor.publisherDigital Repository at the University of Marylanden_US
dc.contributor.publisherUniversity of Maryland (College Park, Md.)en_US
dc.date.accessioned2006-02-04T07:54:16Z
dc.date.available2006-02-04T07:54:16Z
dc.date.issued2005-12-13en_US
dc.description.abstractMakeLink® technology has been applied in many semiconductor devices to achieve high performance. Sometimes one-type-link design doesn't make desirous links for all IC manufacturing processes. In this work, four new structures, called microbridge, were designed to form all types of link. Laser processing experiments were performed to verify the designs. The results show that two-lower-level-metal-line design has higher performance (low link resistance), higher productivity (broad energy window), and higher yield than the three-lower-level-metal-line design. Therefore, it can be considered as the optimal design from the processing point of view. Two-lower-level-metal-line with lateral gap structure provides better scalability and it can be used in next generation ICs. If high-speed is the primary concern, an advanced-lateral structure is best, corresponding to its much lower resistance. The reliability tests indicate that the median-times-to-failure of all test structures are greater than nine years in operating condition, presenting reasonable lifetimes for integrated circuits used in the market. A two-dimensional finite element plane models for microbridge formation is developed. Results are compared to the experiments with process windows to present their consistence. The model allowed for using different geometric parameters and metal-dielectric combinations optimizing the design. An optimal design diagram for the Al/SiO2 system is created to provide the designer with criteria to avoid the failure of structure. Trade-off requirements, such as process window and structure size, are also provided. Guidelines are obtained for the Cu/Low-K dielectric system.en_US
dc.format.extent6121559 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.urihttp://hdl.handle.net/1903/3249
dc.language.isoen_US
dc.subject.pqcontrolledEngineering, Mechanicalen_US
dc.subject.pqcontrolledEngineering, Mechanicalen_US
dc.subject.pqcontrolledEngineering, Electronics and Electricalen_US
dc.subject.pquncontrolledmicrobridgeen_US
dc.subject.pquncontrolledpulsed laseren_US
dc.subject.pquncontrolledinterline connectionen_US
dc.subject.pquncontrolledfinite elementen_US
dc.subject.pquncontrolleddesign optimizationen_US
dc.titleMicrobridge Formation for Low Resistance Interline Connection Using Pulsed Laser Techniquesen_US
dc.typeDissertationen_US

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