Modeling and Simulation of a Tungsten Chemical Vapor Deposition Reactor

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dc.contributor.advisorAdomaitis, Raymond A.en_US
dc.contributor.authorChang, Hsiao-Yungen_US
dc.contributor.departmentISRen_US
dc.date.accessioned2007-05-23T10:09:42Z
dc.date.available2007-05-23T10:09:42Z
dc.date.issued2000en_US
dc.description.abstractChemical vapor deposition (CVD) processes are widely used in semiconductor device fabrication to deposit thin films of electronic materials. Physically based CVD modeling and simulation methods have been adopted for reactor design and process optimization applications to satisfy the increasingly strigent processing requirements. <p>In this research, an ULVAC ERA-1000 selective tungsten chemical vapor deposition system located at the University of Maryland was studied where a temperature difference as large as 120 <sup>o</sup>C between the system wafer temperature reading and the thermocoupled instrumented wafer measurement was found during the manual processing mode. <p>The goal of this research was to develop a simplified, but accurate, three-dimensional transport model that is capable of describing the observed reactor behavior.<p>A hybrid approach combining experimental and simulation studies was used for model development. Several sets of experiments were conducted to investigate the effects of process parameters on wafer temperature. <p>A three-dimensional gas flow and temperature model was developed and used to compute the energy transferred across the gas/wafer interface. System dependent heat transfer parameters were formulated as a nonlinear parameter estimation problem and identified using experimental measurements. <p>Good agreement was found between the steady-state wafer temperature predictions and experimental data at various gas compositions, and the wafer temperature dynamics were successfully predicted using a temperature model considering the energy exchanges between the thermocouple, wafer, and showerhead.en_US
dc.format.extent1929788 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.urihttp://hdl.handle.net/1903/6149
dc.language.isoen_USen_US
dc.relation.ispartofseriesISR; PhD 2000-7en_US
dc.subjectchemical process controlen_US
dc.subjectmathematical modelingen_US
dc.subjectsimulationen_US
dc.subjectestimationen_US
dc.subjectdistributed parameter systemsen_US
dc.subjectlinear systemsen_US
dc.subjectnonlinear systemsen_US
dc.subjectoptimizationen_US
dc.subjectchemical vapor depositionen_US
dc.subjectmethod of weighted residualsen_US
dc.subjectheat transfer modelingen_US
dc.subjectparameter estimationen_US
dc.subjectSensor-Actuator Networksen_US
dc.titleModeling and Simulation of a Tungsten Chemical Vapor Deposition Reactoren_US
dc.typeDissertationen_US

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