A NEW APPROACH TO SPATIALLY CONTROLLABLE CVD

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dc.contributor.advisorAdomaitis, Raymond A.en_US
dc.contributor.authorChoo, Jae-Ouken_US
dc.contributor.authorAdomaitis, Raymond A.en_US
dc.contributor.authorRubloff, Gary W.en_US
dc.contributor.authorHenn-Lecordier, Laurenten_US
dc.contributor.authorCai, Yuhongen_US
dc.contributor.departmentISRen_US
dc.date.accessioned2007-05-23T10:15:08Z
dc.date.available2007-05-23T10:15:08Z
dc.date.issued2004en_US
dc.description.abstractThis paper describes the continuing design evolution of a new approach to spatially controllable chemical vapor deposition for electronic materials manufacturing. Based on the success of a previous prototype reactor, we describe construction of a newer version of the prototype reactor system to assess its performance and identify its key operational characteristics. This new design includes a fully automated feed gas control system, allowing the reprogramming of reactor operation without hardware modifications and a time-shared gas sampling mass spectrometer for spatially resolved across-wafer gas composition analysis.en_US
dc.format.extent648662 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.urihttp://hdl.handle.net/1903/6428
dc.language.isoen_USen_US
dc.relation.ispartofseriesISR; TR 2004-22en_US
dc.titleA NEW APPROACH TO SPATIALLY CONTROLLABLE CVDen_US
dc.typeTechnical Reporten_US

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