Influence of Gas Composition on Wafer Temperature Control in a Tungsten Chemical Vapor Deposition Reactor

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dc.contributor.authorChang, Hsiao-Yungen_US
dc.contributor.authorAdomaitis, Raymond A.en_US
dc.contributor.authorKidder, John N., Jr.en_US
dc.contributor.authorRubloff, Gary W.en_US
dc.contributor.departmentISRen_US
dc.date.accessioned2007-05-23T10:09:15Z
dc.date.available2007-05-23T10:09:15Z
dc.date.issued2000en_US
dc.description.abstractExperimental measurements of wafer temperature in a single-wafer,lamp-heated CVD system were used to study the wafer temperature responseto gas composition. A physically based simulation procedure for theprocess gas and wafer temperature was developed in which a subset ofparameter values were estimated using a nonlinear, iterative parameteridentification method, producing a validated model with true predictivecapabilities. <p>With process heating lamp power held constant, wafertemperature variations of up to 160 degrees K were observed by varying feed gasH_2/N_2 ratio. Heat transfer between the wafer and susceptor wasstudied by shifting the instrumented wafer off the susceptor axis,exposing a portion of the wafer backside to the chamber floor. Modelpredictions and experimental observations both demonstrated that the gasvelocity field had little influence on the observed wafer and predictedgas temperatures.en_US
dc.format.extent1461655 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.urihttp://hdl.handle.net/1903/6127
dc.language.isoen_USen_US
dc.relation.ispartofseriesISR; TR 2000-9en_US
dc.subjectchemical process controlen_US
dc.subjectdistributed parameter systemsen_US
dc.subjectchemical vapor depositionen_US
dc.subjectsemiconductor manufacturingen_US
dc.subjectparameter identificationen_US
dc.subjectmodel validationen_US
dc.subjectIntelligent Control Systemsen_US
dc.titleInfluence of Gas Composition on Wafer Temperature Control in a Tungsten Chemical Vapor Deposition Reactoren_US
dc.typeTechnical Reporten_US

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