MONOLAYER MOLYBDENUM DISULFIDE IN SEMICONDUCTOR ELECTRONICS

Abstract

Two-dimensional (2D) semiconductors are a new class of materials being researched due to their unique electrical, optical, and mechanical properties compared to their bulk counterparts. Here I investigate the use of the 2D semiconductor molybdenum disulfide (MoS2) as the active channel material in various electronic devices and circuits. Motivation is provided for 2D materials in general and monolayer MoS2 in particular, followed by an overview of the material properties of MoS2 and a relevant literature review. Back-gated field-effect transistors (FETs) were fabricated and characterized to investigate the impact of growth conditions on material properties, and to study the performance of different contact metals. A top-gated fabrication process was developed to make RF transistors and simple amplifier circuits on rigid and flexible substrates. Finally, device operating characteristics were modeled using simple transistor current-voltage equations, and Monte Carlo electron transport simulations were performed to demonstrate the importance of device operating temperature and intervalley separation in the conduction band.