Si(111) step fluctuations at high temperature: Anomalous step-step repulsion

dc.contributor.authorCohen, Saul D.
dc.contributor.authorSchroll, Robert D.
dc.contributor.authorEinstein, Theodore L.
dc.contributor.authorMetois, J.-J.
dc.contributor.authorGebremariam, Hailu
dc.contributor.authorRichards, Howard L.
dc.contributor.authorWilliams, Ellen D.
dc.date.accessioned2024-03-11T15:55:15Z
dc.date.available2024-03-11T15:55:15Z
dc.date.issued2002
dc.description.abstractUsing reflection electron microscopy we examine the step fluctuations of Si(111) at 1100°C. Evaporation is compensated by a replenishing flux. The step fluctuation behavior is qualitatively similar to that at 900°C (where sublimation is negligible), with unexplained quantitative differences. We focus on the three parameters of the step continuum model of vicinals. The step stiffness scales with an increase in T from 900°C as predicted by an appropriate lattice model. The kinetic coefficient is larger than scaling of the parameters from 900°C would predict. The step-step correlations are assessed in traditional and novel ways; step repulsions are at least 6 times as strong as predicted from lower temperatures, suggesting nonequilibrium effects probably due to electromigration.
dc.description.urihttps://doi.org/10.1103/PhysRevB.66.115310
dc.identifierhttps://doi.org/10.13016/qp6l-x51u
dc.identifier.citationCohen, Schroll, et al, Si(111) step fluctuations at high temperature: Anomalous step-step repulsion. Physical Review B, 66, 11, 2002.
dc.identifier.urihttp://hdl.handle.net/1903/32302
dc.publisherAmerican Physical Society
dc.titleSi(111) step fluctuations at high temperature: Anomalous step-step repulsion
dc.typeArticle

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