Terrace-width distributions on vicinal Si(111)

dc.contributor.authorWang, X.-S.
dc.contributor.authorGoldberg, J. L.
dc.contributor.authorBartelt, N. C.
dc.contributor.authorEinstein, Theodore L.
dc.contributor.authorWilliams, Ellen D.
dc.date.accessioned2024-03-11T15:55:11Z
dc.date.available2024-03-11T15:55:11Z
dc.date.issued1991
dc.description.abstractUsing scanning tunneling microscopy, we have quantitatively characterized the configurations of steps on vicinal Si(111) surfaces misoriented by 1.2 degrees and 2.3 degrees towards the (1- 1- 2) direction. The measured terrace-width distributions are strongly peaked, consistent with predictions for thermally wandering steps. However, the distributions are much narrower than predicted for the simple terrace-step-kink model, indicating that the steps interact with energetic short-range repulsions. The magnitude of this energetic repulsion is gauged from a Gaussian fit to the data. The width of the distribution scales with step density as expected for repulsions which decay as the inverse square of step separation.
dc.description.urihttps://doi.org/10.1103/PhysRevLett.65.2430
dc.identifierhttps://doi.org/10.13016/ps5w-qdsf
dc.identifier.citationWang, Goldberg, et al, Terrace-width distributions on vicinal Si(111). Physical Review Letters, 65, 2430-2433, 1990.
dc.identifier.urihttp://hdl.handle.net/1903/32280
dc.publisherAmerican Physical Society
dc.titleTerrace-width distributions on vicinal Si(111)
dc.typeArticle

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