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Fabrication of Bragg Gratings Using Interferometric Lithography

dc.contributor.advisorGoldhar, Juliusen_US
dc.contributor.authorPizarro, Ricardo Andresen_US
dc.date.accessioned2007-06-22T05:34:46Z
dc.date.available2007-06-22T05:34:46Z
dc.date.issued2007-04-30
dc.identifier.urihttp://hdl.handle.net/1903/6817
dc.description.abstractA setup has been designed and realized for the fabrication of Bragg Gratings in edge emitting semiconductor laser. In this setup a HeCd laser, at 325nm, is used in a Lloyd's mirror configuration, to interferometrically expose a sinusoidal grating on photoresist. The dilution of photo-resistant (PR) material allows for a spincoat thickness of 50nm which is needed to minimize standing waves in the photo-resist that lead to a nonuniform exposure. Variations of exposure time show the progression of photo-resist gratings. Etching recipes using both dry and wet etching techniques were successfully used to transfer the grating pattern into semiconductor material. Bragg Gratings with period of 250nm in InP and InGaAs have been characterized with an Atomic Force Microscope to have a grating height of over 100nm.en_US
dc.format.extent3141407 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.titleFabrication of Bragg Gratings Using Interferometric Lithographyen_US
dc.typeThesisen_US
dc.contributor.publisherDigital Repository at the University of Marylanden_US
dc.contributor.publisherUniversity of Maryland (College Park, Md.)en_US
dc.contributor.departmentElectrical Engineeringen_US
dc.subject.pqcontrolledEngineering, Electronics and Electricalen_US
dc.subject.pquncontrolledbragg gratingsen_US
dc.subject.pquncontrolledfabricationen_US
dc.subject.pquncontrolledlloyd's mirroren_US
dc.subject.pquncontrolledsemiconductor laser;en_US


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