Show simple item record

dc.contributor.authorAdomaitis, Raymond A.en_US
dc.date.accessioned2007-05-23T10:04:19Z
dc.date.available2007-05-23T10:04:19Z
dc.date.issued1997en_US
dc.identifier.urihttp://hdl.handle.net/1903/5880
dc.description.abstractA model of a multiple heating zone Rapid Thermal Processing (RTP) system is developed to study wafer thermal dynamics during a processing cycle. The system is discretized with trial functions generated from the linearized wafer energy balance equation eigenfunctions, and careful analysis of the solution residual reveals a slow, but predictable, convergence rate. A modified set of trial functions is derived from a subset of the original eigenfunctions combined with the dominant modes identified by the Karhunen-Loeve expansion of the wafer temperature variance component that contributes most to the slow convergence. Since the wafer temperature variance is computed explicitly from an eigenfunction expansion solution of the linearized system with specified processing statistics, the collocation procedure effectively links RTP model reduction and simulation in one discretization procedure. The convergence rate of the modified collocation method is shown to be superior to collocation methods based on the original eigenfunction and polynomial sequences.en_US
dc.format.extent462513 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoen_USen_US
dc.relation.ispartofseriesISR; TR 1997-63en_US
dc.subjectmathematical modelingen_US
dc.subjectsimulationen_US
dc.subjectdistributed parameter systemsen_US
dc.subjectmaterials processing simulationen_US
dc.subjectrapid thermal processingen_US
dc.subjectmodel reductionen_US
dc.subjectorthogonal collocationen_US
dc.subjectIntelligent Control Systemsen_US
dc.titleAn Orthogonal Collocation Technique for Rapid Thermal Processing System Discretizationen_US
dc.typeTechnical Reporten_US
dc.contributor.departmentISRen_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record